中国物理B ›› 2012, Vol. 21 ›› Issue (8): 88502-088502.doi: 10.1088/1674-1056/21/8/088502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer

张倩, 张玉明, 元磊, 张义门, 汤晓燕, 宋庆文   

  1. School of Microelectronics, Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2011-12-08 修回日期:2012-01-13 出版日期:2012-07-01 发布日期:2012-07-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 60876061) and the National Defense Key Laboratory Foundation from Nanjing National Defense Key Laboratory of Nanjing Electronic Devices Institute, China (Grant No. 20090C1403).

Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer

Zhang Qian (张倩), Zhang Yu-Ming (张玉明), Yuan Lei (元磊), Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文 )   

  1. School of Microelectronics, Key Laboratory of Semiconductor Wide Band-Gap Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2011-12-08 Revised:2012-01-13 Online:2012-07-01 Published:2012-07-01
  • Contact: Zhang Qian E-mail:zhangqian4213@126.com
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 60876061) and the National Defense Key Laboratory Foundation from Nanjing National Defense Key Laboratory of Nanjing Electronic Devices Institute, China (Grant No. 20090C1403).

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摘要： In this paper we report on a novel structure of 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at IC=28.6 mA (JC=183.4 A/cm2), and it increases with the collector current density increasing. The specific on-state resistance (Rsp-on) is 32.3 mΩ·cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N + emitter layer sheet resistance are 1.7× 10-3 Ω·cm2 and 150 Ω /□, respectively.

关键词: 4H-SiC, bipolar junction transistors, common-emitter current gain, specific on-resistance, open-base breakdown voltage

Abstract: In this paper we report on a novel structure of 4H-SiC bipolar junction transistor with a double base epilayer that is continuously grown. The measured dc common-emitter current gain is 16.8 at IC=28.6 mA (JC=183.4 A/cm2), and it increases with the collector current density increasing. The specific on-state resistance (Rsp-on) is 32.3 mΩ·cm2 and the open-base breakdown voltage reaches 410 V. The emitter N-type specific contact resistance and N + emitter layer sheet resistance are 1.7× 10-3 Ω·cm2 and 150 Ω /□, respectively.

Key words: 4H-SiC, bipolar junction transistors, common-emitter current gain, specific on-resistance, open-base breakdown voltage

中图分类号:  (Bipolar transistors)

  • 85.30.Pq
51.50.+v (Electrical properties) 78.40.Fy (Semiconductors)