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Xing-Ye Zhou(周幸叶), Yuan-Jie Lv(吕元杰), Hong-Yu Guo(郭红雨), Guo-Dong Gu(顾国栋), Yuan-Gang Wang(王元刚), Shi-Xiong Liang(梁士雄), Ai-Min Bu(卜爱民), and Zhi-Hong Feng(冯志红). Analysis of high-temperature performance of 4H-SiC avalanche photodiodes in both linear and Geiger modes[J]. 中国物理B, 2023, 32(3): 38502-038502. |
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Pei Shen(沈培), Ying Wang(王颖), and Fei Cao(曹菲). A 4H-SiC trench MOSFET structure with wrap N-type pillar for low oxide field and enhanced switching performance[J]. 中国物理B, 2022, 31(7): 78501-078501. |
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Yuanchao Huang(黄渊超), Rong Wang(王蓉), Yixiao Qian(钱怡潇), Yiqiang Zhang(张懿强), Deren Yang(杨德仁), and Xiaodong Pi(皮孝东). Theoretical study on the improvement of the doping efficiency of Al in 4H-SiC by co-doping group-IVB elements[J]. 中国物理B, 2022, 31(4): 46104-046104. |
[4] |
Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀). Radiation effects of 50-MeV protons on PNP bipolar junction transistors[J]. 中国物理B, 2022, 31(2): 28502-028502. |
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Wei-Zhong Chen(陈伟中), Hai-Feng Qin(秦海峰), Feng Xu(许峰), Li-Xiang Wang(王礼祥), Yi Huang(黄义), and Zheng-Sheng Han(韩郑生). A 4H-SiC merged P-I-N Schottky with floating back-to-back diode[J]. 中国物理B, 2022, 31(2): 28503-028503. |
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Xing-Hua Liu(刘兴华), Fang-Fang Ren(任芳芳), Jiandong Ye(叶建东), Shuxiao Wang(王书晓), Wei-Zong Xu(徐尉宗), Dong Zhou(周东), Mingbin Yu(余明斌), Rong Zhang(张荣), Youdou Zheng(郑有炓), and Hai Lu(陆海). Enhanced single photon emission in silicon carbide with Bull's eye cavities[J]. 中国物理B, 2022, 31(10): 104206-104206. |
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Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Design and simulation of AlN-based vertical Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67305-067305. |
[8] |
Pei Shen(沈培), Ying Wang(王颖), Xing-Ji Li(李兴冀), Jian-Qun Yang(杨剑群), Cheng-Hao Yu(于成浩), and Fei Cao(曹菲). Improved 4H-SiC UMOSFET with super-junction shield region[J]. 中国物理B, 2021, 30(5): 58502-058502. |
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吴丽娟, 朱琳, 陈星. Variable-K double trenches SOI LDMOS with high-concentration P-pillar[J]. 中国物理B, 2020, 29(5): 57701-057701. |
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蔡小龙, 周东, 程亮, 任芳芳, 钟宏, 张荣, 郑有炓, 陆海. Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses[J]. 中国物理B, 2019, 28(9): 98503-098503. |
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李金岚, 李赟, 汪玲, 徐跃, 闫锋, 韩平, 纪小丽. Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode[J]. 中国物理B, 2019, 28(2): 27303-027303. |
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刘青, 蒲红斌, 王曦. Ultra-high voltage 4H-SiC gate turn-off thyristor forlow switching time[J]. 中国物理B, 2019, 28(12): 127201-127201. |
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袁昊, 宋庆文, 韩超, 汤晓燕, 何晓宁, 张玉明, 张义门. Hysteresis effect in current-voltage characteristics of Ni/n-type 4H-SiC Schottky structure[J]. 中国物理B, 2019, 28(11): 117303-117303. |
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汤益丹, 刘新宇, 周正东, 白云, 李诚瞻. Defects and electrical properties in Al-implanted 4H-SiC after activation annealing[J]. 中国物理B, 2019, 28(10): 106101-106101. |
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黄海栗, 汤晓燕, 郭辉, 张义门, 王雨田, 张玉明. Simulation of SiC radiation detector degradation[J]. 中国物理B, 2019, 28(1): 10701-010701. |