High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)

doi:10.1088/1674-1056/21/8/088503

中国物理B ›› 2012, Vol. 21 ›› Issue (8): 88503-088503.doi: 10.1088/1674-1056/21/8/088503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)

刘玉荣^{a b}, 黎沛涛^c, 姚若河^{a b}

a The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
b Guangdong Provincial Key Laboratory of Short-range Wireless Detection and Communication, South China University of Technology, Guangzhou 510640, China;
c Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China

收稿日期:2011-11-28 修回日期:2012-04-27 出版日期:2012-07-01 发布日期:2012-07-01
基金资助:
Projected supported by the National Natural Science Foundation of China (Grant No. 61076113), the Natural Science Foundation of Guangdong Province, China (Grant No. 8451064101000257), and the Research Grants Council (RGC) of Hong Kong Special Administrative Region (HKSAR), China (Grant No. HKU 7133/07E).

High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)

Liu Yu-Rong (刘玉荣)^{a b}, Lai Pei-Tao (黎沛涛)^c, Yao Ruo-He (姚若河 )^{a b}

a The School of Electronic and Information Engineering, South China University of Technology, Guangzhou 510640, China;
b Guangdong Provincial Key Laboratory of Short-range Wireless Detection and Communication, South China University of Technology, Guangzhou 510640, China;
c Department of Electrical and Electronic Engineering, the University of Hong Kong, Pokfulam Rd., Hong Kong, China

Received:2011-11-28 Revised:2012-04-27 Online:2012-07-01 Published:2012-07-01
Contact: Liu Yu-Rong E-mail:phlyr@scut.edu.cn
Supported by:
Projected supported by the National Natural Science Foundation of China (Grant No. 61076113), the Natural Science Foundation of Guangdong Province, China (Grant No. 8451064101000257), and the Research Grants Council (RGC) of Hong Kong Special Administrative Region (HKSAR), China (Grant No. HKU 7133/07E).

摘要/Abstract

摘要： Polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are fabricated by spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7× 10³ at an illumination intensity of 1200 lx, and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx. However, when the device is in the on-state operating mode, the photosensitivity is very low: only 1.88 at an illumination intensity of 1200 lx for a gate voltage of -20 V and a drain voltage of -20 V. The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.

关键词: semiconducting polymer, thin film transistor, photosensitivity, phototransistor

Abstract: Polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are fabricated by spin-coating process, and their photo-sensing characteristics are investigated under steady-state visible-light illumination. The photosensitivity of the device is strongly modulated by gate voltage under various illuminations. When the device is in the subthreshold operating mode, a significant increase in its drain current is observed with a maximum photosensitivity of 1.7× 10³ at an illumination intensity of 1200 lx, and even with a relatively high photosensitivity of 611 at a low illumination intensity of 100 lx. However, when the device is in the on-state operating mode, the photosensitivity is very low: only 1.88 at an illumination intensity of 1200 lx for a gate voltage of -20 V and a drain voltage of -20 V. The results indicate that the devices could be used as photo-detectors or sensors in the range of visible light. The modulation mechanism of the photosensitivity in the PTFT is discussed in detail.

Key words: semiconducting polymer, thin film transistor, photosensitivity, phototransistor

中图分类号: (Field effect devices)

85.30.Tv

85.60.Dw (Photodiodes; phototransistors; photoresistors) 73.61.Ph (Polymers; organic compounds)

刘玉荣, 黎沛涛, 姚若河 . High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)[J]. 中国物理B, 2012, 21(8): 88503-088503.

Liu Yu-Rong (刘玉荣), Lai Pei-Tao (黎沛涛), Yao Ruo-He (姚若河 ). High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)[J]. Chin. Phys. B, 2012, 21(8): 88503-088503.

参考文献 22

[1]	Tzeng K L, Meng H F, Tzeng M F, Chen Y S, Liu C H, Horng S F, Yang Y Z, Chang S M, Hsu C S and Chi C C 2004 Appl. Phys. Lett. 84 619
[2]	Liu Y X and Cui T H 2005 Solid-State Electronics 49 445
[3]	Fukuda H, Ise M, Kogure T and Takano N 2004 Thin Solid Films 464-465 441
[4]	Halls J J M, Walsh C A, Greenham N C, Marseglia E A, Friend R H, Moratti S C and Holmes A B 1995 Nature 376 498
[5]	Peumans P, Yakimov A and Forrest S R 2003 J. Appl. Phys. 93 3693
[6]	Chikamatsu M, Ichino Y, Takada N, Yoshida M, Kamata T and Yase K 2002 Appl. Phys. Lett. 81 769
[7]	Sze S M 1981 Physics of Semiconductor Devices 2nd edn. (New York: John Wiley & Sons, Inc.) p. 783
[8]	Lucas B, El Amrani A, Chakaroun M, Ratier B, Antony R and Moliton A 2009 Thin Solid Films 517 6280
[9]	Noh Y Y, Kim D Y, Yoshida Y, Yase K, Jung B J, Lim E and Shim H K 2005 Appl. Phys. Lett. 86 043501
[10]	Narayan K S and Kumar N 2001 Appl. Phys. Lett. 79 1891
[11]	Hamilton M C, Martin S and Kanicki J 2004 IEEE Trans. Electron Dev. 51 877
[12]	Sirringhaus H, Tessler N and Friend R H 1998 Science 280 1741
[13]	Pal T, Arif M and Khondaker S I 2010 Nanotechnology 21 325201
[14]	Yan F, Li J H and Mok S M 2009 J. Appl. Phys. 106 074501
[15]	Liu Y R, Wu L M, Lai P T and Zuo Q Y 2009 Semicond. Sci. Technol. 24 095013
[16]	Hamilton M C and Kanicki J 2004 IEEE J. Select. Topics Quantum Electron. 10 840
[17]	Wang X, Wasapinyokul K, Tan W D, Rawcliffe R, Campbell A J and Bradley D D C 2010 J. Appl. Phys. 107 024509
[18]	Xie Z, Abdou M S A, Lu X, Deen M J and Holdcroft S 1992 Can. J. Phys. 70 1171
[19]	Wang G M, Swensen J, Moses D and Heeger A J 2003 J. Appl. Phys. 93 6137
[20]	Kiguchi M, Nakayama M and Shimada T 2005 Phys. Rev. B 71 035332
[21]	Antoniadis H, Rothberg L J, Papadimitrakopoulos F, Yan M, Gavin M E and Abkowitz M A 1994 Phys. Rev. B 50 14911
[22]	Dutta S and Narayan K S 2004 Adv. Mater. 16 2151

High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)

High-photosensitivity polymer thin-film transistors based on poly(3-hexylthiophene)

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