Simulation of SiC radiation detector degradation

doi:10.1088/1674-1056/28/1/010701

中国物理B ›› 2019, Vol. 28 ›› Issue (1): 10701-010701.doi: 10.1088/1674-1056/28/1/010701

• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇下一篇

Simulation of SiC radiation detector degradation

Hai-Li Huang(黄海栗), Xiao-Yan Tang(汤晓燕), Hui Guo(郭辉), Yi-Men Zhang(张义门), Yu-Tian Wang(王雨田), Yu-Ming Zhang(张玉明)

1 School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

收稿日期:2018-09-20 修回日期:2018-10-30 出版日期:2019-01-05 发布日期:2019-01-05
通讯作者: Xiao-Yan Tang E-mail:xytang@mail.xidian.edu.cn
基金资助:
Project supported by the National Key R&D Program of China (Grant No. 2016YFB0400400).

Simulation of SiC radiation detector degradation

Hai-Li Huang(黄海栗)^1,2, Xiao-Yan Tang(汤晓燕)^1,2, Hui Guo(郭辉)^1,2, Yi-Men Zhang(张义门)^1,2, Yu-Tian Wang(王雨田)^1,2, Yu-Ming Zhang(张玉明)^1,2

1 School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China

Received:2018-09-20 Revised:2018-10-30 Online:2019-01-05 Published:2019-01-05
Contact: Xiao-Yan Tang E-mail:xytang@mail.xidian.edu.cn
Supported by:
Project supported by the National Key R&D Program of China (Grant No. 2016YFB0400400).

摘要/Abstract

摘要：

Simulation on the degradation of 4H-SiC Schottky detector was carried out using ISE TCAD, and the limit of the drift-diffusion analytical model was discussed. Two independent defect levels, rather than a pair of specific carrier lifetime, were induced to describe Z1/2 defects in simulation to calculate the charge collection efficiency versus bias voltage. Comparison between our calculation and the reported experimental results shows that an acceptable agreement was achieved, proving the feasibility of regarding Z1/2 defect as two individual defect levels. Such a treatment can simplify the simulation and may help to further investigate the detector degradation.

关键词: 4H-SiC, detector degradation, simulation, Z1/2 defect

Abstract:

Key words: 4H-SiC, detector degradation, simulation, Z1/2 defect

中图分类号: (X- and γ-ray sources, mirrors, gratings, and detectors)

07.85.Fv

29.85.Fj (Data analysis) 29.40.-n (Radiation detectors)

黄海栗, 汤晓燕, 郭辉, 张义门, 王雨田, 张玉明. Simulation of SiC radiation detector degradation[J]. 中国物理B, 2019, 28(1): 10701-010701.

Hai-Li Huang(黄海栗), Xiao-Yan Tang(汤晓燕), Hui Guo(郭辉), Yi-Men Zhang(张义门), Yu-Tian Wang(王雨田), Yu-Ming Zhang(张玉明). Simulation of SiC radiation detector degradation[J]. Chin. Phys. B, 2019, 28(1): 10701-010701.

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Simulation of SiC radiation detector degradation

Simulation of SiC radiation detector degradation

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