Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer
张倩, 张玉明, 元磊, 张义门, 汤晓燕, 宋庆文
Fabrication and characterization of 4H–SiC bipolar junction transistor with double base epilayer
Zhang Qian (张倩), Zhang Yu-Ming (张玉明), Yuan Lei (元磊), Zhang Yi-Men (张义门), Tang Xiao-Yan (汤晓燕), Song Qing-Wen (宋庆文 )
中国物理B
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2012, (8): 88502
-088502
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DOI: 10.1088/1674-1056/21/8/088502