中国物理B ›› 2012, Vol. 21 ›› Issue (6): 68502-068502.doi: 10.1088/1674-1056/21/6/068502
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
汪涛a, 郭清a, 刘艳b, Yun Janggnc
Wang Tao(汪涛)a), Guo Qing(郭清)a), Liu Yan(刘艳)b)†, and Yun Janggnc)
摘要: After post-silicidation annealing at various temperatures for 30 min, abnormal oxidation and agglomeration in nickel silicide and nickel germanosilicide are investigated under different conditions of NiSi, with As-, In-, and Sb-doped Si substrates of nickel germanosilicide without any dopants. The NiSi thickness, dopant species, doping concentration, and silicide process conditions are dominant factors for abnormal oxidation and NiSi agglomeration. Larger dopants than Si, thinner NiSi thickness and SiGe substrates, and higher dopant concentrations promote abnormal oxidation and agglomeration.
中图分类号: (Junction diodes)