中国物理B ›› 2012, Vol. 21 ›› Issue (6): 68502-068502.doi: 10.1088/1674-1056/21/6/068502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

汪涛a, 郭清a, 刘艳b, Yun Janggnc   

  1. a. College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
    b. Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 310007, China;
    c. Department of Electronic Engineering, Chungnam National University, Gung-Dong, Daejeon, Korea
  • 收稿日期:2011-09-30 修回日期:2011-12-07 出版日期:2012-05-01 发布日期:2012-05-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176101), the “Zijing Program Foundation” of Zhejiang University, and the Natural Science Foundation of Zhejiang Province for Oversea Returners.

Abnormal oxidation in nickel silicide and nickel germanosilicide in sub-micro CMOS

Wang Tao(汪涛)a), Guo Qing(郭清)a), Liu Yan(刘艳)b)†, and Yun Janggnc)   

  1. a. College of Electrical Engineering, Zhejiang University, Hangzhou 310027, China;
    b. Second Affiliated Hospital, College of Medicine, Zhejiang University, Hangzhou 310007, China;
    c. Department of Electronic Engineering, Chungnam National University, Gung-Dong, Daejeon, Korea
  • Received:2011-09-30 Revised:2011-12-07 Online:2012-05-01 Published:2012-05-01
  • Contact: Liu Yan E-mail:liuyan2010@zju.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 61176101), the “Zijing Program Foundation” of Zhejiang University, and the Natural Science Foundation of Zhejiang Province for Oversea Returners.

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摘要： After post-silicidation annealing at various temperatures for 30 min, abnormal oxidation and agglomeration in nickel silicide and nickel germanosilicide are investigated under different conditions of NiSi, with As-, In-, and Sb-doped Si substrates of nickel germanosilicide without any dopants. The NiSi thickness, dopant species, doping concentration, and silicide process conditions are dominant factors for abnormal oxidation and NiSi agglomeration. Larger dopants than Si, thinner NiSi thickness and SiGe substrates, and higher dopant concentrations promote abnormal oxidation and agglomeration.

关键词: NiSi, NiSiGe, oxidation, metal-oxide semiconductor field-effect transistor, sub-micro IC process

Abstract: After post-silicidation annealing at various temperatures for 30 min, abnormal oxidation and agglomeration in nickel silicide and nickel germanosilicide are investigated under different conditions of NiSi, with As-, In-, and Sb-doped Si substrates of nickel germanosilicide without any dopants. The NiSi thickness, dopant species, doping concentration, and silicide process conditions are dominant factors for abnormal oxidation and NiSi agglomeration. Larger dopants than Si, thinner NiSi thickness and SiGe substrates, and higher dopant concentrations promote abnormal oxidation and agglomeration.

Key words: NiSi, NiSiGe, oxidation, metal-oxide semiconductor field-effect transistor, sub-micro IC process

中图分类号:  (Junction diodes)

  • 85.30.Kk
85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Hi (Surface barrier, boundary, and point contact devices)