中国物理B ›› 2012, Vol. 21 ›› Issue (6): 68503-068503.doi: 10.1088/1674-1056/21/6/068503
• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇 下一篇
王颖, 兰昊, 曹菲, 刘云涛, 邵雷
Wang Ying(王颖)†, Lan Hao(兰昊), Cao Fei(曹菲), Liu Yun-Tao(刘云涛), and Shao Lei(邵雷)
摘要: A novel split-gate power UMOSFET with a variable K dielectric layer is proposed. This device shows a 36.2% reduction in the specific on-state resistance at a breakdown voltage of 115 V, as compared with the SGE-UMOS device. Numerical simulation results indicate that the proposed device features high performance with an improved figure of merit of Qg ? RON and BV2/RON, as compared with the previous power UMOSFET.
中图分类号: (Field effect devices)