中国物理B ›› 2013, Vol. 22 ›› Issue (7): 77309-077309.doi: 10.1088/1674-1056/22/7/077309
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
付强, 张波, 罗小蓉, 李肇基
Fu Qiang (付强), Zhang Bo (张波), Luo Xiao-Rong (罗小蓉), Li Zhao-Ji (李肇基)
摘要: In this paper, a novel dual-gate & dielectric-inserted lateral trench insulated gate bipolar transistor (DGDI LTIGBT) structure which features the double extended trench gate and dielectric-inserted in the drift region is proposed and discussed. The device can not only decrease the specific on-resistance Ron,sp but also simultaneously improve the temperature performance. Simulation results show that the proposed LTIGBT achieves an ultra-low on-state voltage drop of 1.31 V at 700 A·cm-2 with a small half-cell pitch of 10.5 μm, a specific on-resistance Ron,sp of 187 mΩ·mm2, and a high breakdown voltage of 250 V. The on-state voltage drop of the DGDI LTIGBT is 18% less than that of the DI LTIGBT and 30.3% less than that of the conventional LTIGBT. The proposed LTIGBT exhibits a good positive temperature coefficient for safety paralleling to handling larger currents and enhances the short-circuit capability while maintaining a low self-heating effect. Furthermore, it also shows a better tradeoff between the specific on-resistance and the turnoff loss, although it has a longer turnoff delay time.
中图分类号: (Semiconductor-insulator-semiconductor structures)