Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET

doi:10.1088/1674-1056/26/2/027101

中国物理B ›› 2017, Vol. 26 ›› Issue (2): 27101-027101.doi: 10.1088/1674-1056/26/2/027101

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET

Li-Juan Wu(吴丽娟), Zhong-Jie Zhang(章中杰), Yue Song(宋月), Hang Yang(杨航), Li-Min Hu(胡利民), Na Yuan(袁娜)

School of Physics & Electronic Science, Changsha University of Science & Technology, Changsha 410114, China

收稿日期:2016-09-12 修回日期:2016-11-10 出版日期:2017-02-05 发布日期:2017-02-05
通讯作者: Li-Juan Wu E-mail:305719669@qq.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61306094), the Project of Hunan Provincial Education Department, China (Grant No.13ZA0089), the Introduction of Talents Project of Changsha University of Science & Technology, China (Grant No. 1198023), and the Construct Program of the Key Discipline in Hunan Province, China.

Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET

Li-Juan Wu(吴丽娟), Zhong-Jie Zhang(章中杰), Yue Song(宋月), Hang Yang(杨航), Li-Min Hu(胡利民), Na Yuan(袁娜)

School of Physics & Electronic Science, Changsha University of Science & Technology, Changsha 410114, China

Received:2016-09-12 Revised:2016-11-10 Online:2017-02-05 Published:2017-02-05
Contact: Li-Juan Wu E-mail:305719669@qq.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61306094), the Project of Hunan Provincial Education Department, China (Grant No.13ZA0089), the Introduction of Talents Project of Changsha University of Science & Technology, China (Grant No. 1198023), and the Construct Program of the Key Discipline in Hunan Province, China.

摘要/Abstract

摘要： A novel voltage-withstand substrate with high-K (HK, k>3.9, k is the relative permittivity) dielectric and low specific on-resistance (R_on,sp) bulk-silicon, high-voltage LDMOS (HKLR LDMOS) is proposed in this paper. The high-K dielectric and highly doped interface N⁺-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration (N_d) and reshape the electric field distribution. The highly doped N⁺-layer under the high-K dielectric acts as a low resistance path to reduce the R_on,sp. The new device with the high breakdown voltage (BV), the low R_on,sp, and the excellent figure of merit (FOM=BV²/R_on,sp) is obtained. The BV of HKLR LDMOS is 534 V, R_on,sp is 70.6 mΩ·cm², and FOM is 4.039 MW·cm^-2.

关键词: LDMOS, high-K dielectric, highly doped N⁺-layer, high voltage, specific on-resistance

Abstract: A novel voltage-withstand substrate with high-K (HK, k>3.9, k is the relative permittivity) dielectric and low specific on-resistance (R_on,sp) bulk-silicon, high-voltage LDMOS (HKLR LDMOS) is proposed in this paper. The high-K dielectric and highly doped interface N⁺-layer are made in bulk silicon to reduce the surface field drift region. The high-K dielectric can fully assist in depleting the drift region to increase the drift doping concentration (N_d) and reshape the electric field distribution. The highly doped N⁺-layer under the high-K dielectric acts as a low resistance path to reduce the R_on,sp. The new device with the high breakdown voltage (BV), the low R_on,sp, and the excellent figure of merit (FOM=BV²/R_on,sp) is obtained. The BV of HKLR LDMOS is 534 V, R_on,sp is 70.6 mΩ·cm², and FOM is 4.039 MW·cm^-2.

Key words: LDMOS, high-K dielectric, highly doped N⁺-layer, high voltage, specific on-resistance

中图分类号: (Theories and models of many-electron systems)

71.10.-w

73.20.-r (Electron states at surfaces and interfaces) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.40.Ty (Semiconductor-insulator-semiconductor structures)

吴丽娟, 章中杰, 宋月, 杨航, 胡利民, 袁娜. Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET[J]. 中国物理B, 2017, 26(2): 27101-027101.

Li-Juan Wu(吴丽娟), Zhong-Jie Zhang(章中杰), Yue Song(宋月), Hang Yang(杨航), Li-Min Hu(胡利民), Na Yuan(袁娜). Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET[J]. Chin. Phys. B, 2017, 26(2): 27101-027101.

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Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET

Novel high-K with low specific on-resistance high voltage lateral double-diffused MOSFET

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