Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

doi:10.1088/1674-1056/26/4/047306

中国物理B ›› 2017, Vol. 26 ›› Issue (4): 47306-047306.doi: 10.1088/1674-1056/26/4/047306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

1 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Xian Aerosemi Technology Co., LTD, Xi'an 710077, China

收稿日期:2016-12-14 修回日期:2017-02-03 出版日期:2017-04-05 发布日期:2017-04-05
通讯作者: Xiao-Fei Wang E-mail:xjtuwxf@126.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 605119425012).

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

Wei Mao(毛维)¹, Hai-Yong Wang(王海永)¹, Xiao-Fei Wang(王晓飞)², Ming Du(杜鸣)¹, Jin-Feng Zhang(张金风)¹, Xue-Feng Zheng(郑雪峰)¹, Chong Wang(王冲)¹, Xiao-Hua Ma(马晓华)¹, Jin-Cheng Zhang(张进成)¹, Yue Hao(郝跃)¹

1 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Xian Aerosemi Technology Co., LTD, Xi'an 710077, China

Received:2016-12-14 Revised:2017-02-03 Online:2017-04-05 Published:2017-04-05
Contact: Xiao-Fei Wang E-mail:xjtuwxf@126.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61574112, 61334002, 61306017, 61474091, and 61574110) and the Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 605119425012).

摘要/Abstract

摘要： To enhance the reverse blocking capability with low specific on-resistance, a novel vertical metal-oxide-semiconductor field-effect transistor (MOSFET) with a Schottky-drian (SD) and SD-connected semisuperjunctions (SD-D-semi-SJ), named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional (2D) numerical simulations. The SD contacted with the n-pillar exhibits the Schottky-contact property, and that with the p-pillar the Ohmic-contact property. Based on these features, the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions (SJ) or semisuperjunctions (semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage (BV) and the specific on-resistance (R_onA). For a given pillar width and n-drift thickness, there exists a proper range of n-drift concentration (N), in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_onA-BV compared to the predication of SJ MOSFET in the forward applications. And what is much valuable, in this proper range of N, the desired BV and good trade-off could be achieved only by determining the pillar thickness, with the top assist layer thickness unchanged. Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_onA-BV improvement in SD-D-semi-SJ MOSFET. These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.

关键词: vertical MOSFET, Schottky-drain-connected semisuperjunction (SD-D-semi-SJ), reverse blocking, specific on-resistance

Abstract: To enhance the reverse blocking capability with low specific on-resistance, a novel vertical metal-oxide-semiconductor field-effect transistor (MOSFET) with a Schottky-drian (SD) and SD-connected semisuperjunctions (SD-D-semi-SJ), named as SD-D-semi-SJ MOSFET is proposed and demonstrated by two-dimensional (2D) numerical simulations. The SD contacted with the n-pillar exhibits the Schottky-contact property, and that with the p-pillar the Ohmic-contact property. Based on these features, the SD-D-semi-SJ MOSFET could obviously overcome the great obstacle of the ineffectivity of the conventional superjunctions (SJ) or semisuperjunctions (semi-SJ) for the reverse applications and achieve a satisfactory trade-off between the reverse breakdown voltage (BV) and the specific on-resistance (R_onA). For a given pillar width and n-drift thickness, there exists a proper range of n-drift concentration (N), in which the SD-D-semi-SJ MOSFET could exhibit a better trade-off of R_onA-BV compared to the predication of SJ MOSFET in the forward applications. And what is much valuable, in this proper range of N, the desired BV and good trade-off could be achieved only by determining the pillar thickness, with the top assist layer thickness unchanged. Detailed analyses have been carried out to get physical insights into the intrinsic mechanism of R_onA-BV improvement in SD-D-semi-SJ MOSFET. These results demonstrate a great potential of SD-D-semi-SJ MOSFET in reverse applications.

Key words: vertical MOSFET, Schottky-drain-connected semisuperjunction (SD-D-semi-SJ), reverse blocking, specific on-resistance

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

85.30.Tv (Field effect devices) 85.30.De (Semiconductor-device characterization, design, and modeling)

毛维, 王海永, 王晓飞, 杜鸣, 张金风, 郑雪峰, 王冲, 马晓华, 张进成, 郝跃. Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions[J]. 中国物理B, 2017, 26(4): 47306-047306.

Wei Mao(毛维), Hai-Yong Wang(王海永), Xiao-Fei Wang(王晓飞), Ming Du(杜鸣), Jin-Feng Zhang(张金风), Xue-Feng Zheng(郑雪峰), Chong Wang(王冲), Xiao-Hua Ma(马晓华), Jin-Cheng Zhang(张进成), Yue Hao(郝跃). Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions[J]. Chin. Phys. B, 2017, 26(4): 47306-047306.

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Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

Improvement of reverse blocking performance in vertical power MOSFETs with Schottky-drain-connected semisuperjunctions

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