Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature

doi:10.1088/1674-1056/21/6/066105

中国物理B ›› 2012, Vol. 21 ›› Issue (6): 66105-066105.doi: 10.1088/1674-1056/21/6/066105

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature

秦希峰^{a c}, 李洪珍^b, 李双^a, 冀子武^c, 王绘凝^c, 王凤翔^a, 付刚^a

a. College of Science, Shandong Jianzhu University, Jinan 250101, China;
b. College of Physics and Engineering, Qufu Normal University, Qufu 273165, China;
c. School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

收稿日期:2011-10-08 修回日期:2011-11-02 出版日期:2012-05-01 发布日期:2012-05-01
基金资助:
Project supported by the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2011AM011 and ZR2009FM031), the National Natural Science Foundation of China (Grant No. 11005070), and the Science and Technology Item of Shandong Provincial Housing and Urban-Rural Construction Department, China (Grant No. 2011YK033).

Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature

Qin Xi-Feng(秦希峰)^a)c)^†, Li Hong-Zhen(李洪珍)^b), Li Shuang(李双)^a), Ji Zi-Wu(冀子武)^c), Wang Hui-Ning(王绘凝)^c), Wang Feng-Xiang(王凤翔)^a), and Fu Gang(付刚)^a)

a. College of Science, Shandong Jianzhu University, Jinan 250101, China;
b. College of Physics and Engineering, Qufu Normal University, Qufu 273165, China;
c. School of Physics and State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China

Received:2011-10-08 Revised:2011-11-02 Online:2012-05-01 Published:2012-05-01
Contact: Fu Gang E-mail:xfqin@sdjzu.edu.cn
Supported by:
Project supported by the Natural Science Foundation of Shandong Province, China (Grant Nos. ZR2011AM011 and ZR2009FM031), the National Natural Science Foundation of China (Grant No. 11005070), and the Science and Technology Item of Shandong Provincial Housing and Urban-Rural Construction Department, China (Grant No. 2011YK033).

摘要/Abstract

摘要： The annealing behaviour of 400 keV Er ions at a fluence of 2 × 10¹⁵ cm^-2 implanted into silicon-on-insulator (SOI) samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He²⁺ ions with a multiple scattering model. It is found that the damage close to the SOI surface is almost removed after being annealed in O₂ and N₂ atmospheres, successively, at 900 ℃, and that only a small number of the Er atoms segregated to the surface of the SOI sample, whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen. For the SOI sample co-implanted with Er and O ions, there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N₂ atmosphere at 900 ℃.

关键词: Er ion implantation, silicon-on-insulator, annealing behavior, Rutherford backscattering technique

Abstract: The annealing behaviour of 400 keV Er ions at a fluence of 2 × 10¹⁵ cm^-2 implanted into silicon-on-insulator (SOI) samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He²⁺ ions with a multiple scattering model. It is found that the damage close to the SOI surface is almost removed after being annealed in O₂ and N₂ atmospheres, successively, at 900 ℃, and that only a small number of the Er atoms segregated to the surface of the SOI sample, whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen. For the SOI sample co-implanted with Er and O ions, there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N₂ atmosphere at 900 ℃.

Key words: Er ion implantation, silicon-on-insulator, annealing behavior, Rutherford backscattering technique

中图分类号: (Ion radiation effects)

61.80.Jh

61.72.sh (Impurity distribution) 82.80.Yc (Rutherford backscattering (RBS), and other methods ofchemical analysis) 85.40.Ry (Impurity doping, diffusion and ion implantation technology)

秦希峰, 李洪珍, 李双, 冀子武, 王绘凝, 王凤翔, 付刚. Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature[J]. 中国物理B, 2012, 21(6): 66105-066105.

Qin Xi-Feng(秦希峰), Li Hong-Zhen(李洪珍), Li Shuang(李双), Ji Zi-Wu(冀子武), Wang Hui-Ning(王绘凝), Wang Feng-Xiang(王凤翔), and Fu Gang(付刚) . Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature[J]. Chin. Phys. B, 2012, 21(6): 66105-066105.

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Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature

Investigation of the inhibiting outdiffusion of erbium atoms to a silicon-on-insulator surface after annealing at high temperature

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