中国物理B ›› 2015, Vol. 24 ›› Issue (8): 88501-088501.doi: 10.1088/1674-1056/24/8/088501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs

吕凯, 陈静, 罗杰馨, 何伟伟, 黄建强, 柴展, 王曦   

  1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • 收稿日期:2014-12-15 修回日期:2015-03-03 出版日期:2015-08-05 发布日期:2015-08-05

Effects of back gate bias on radio-frequency performance in partially depleted silicon-on-inslator nMOSFETs

Lü Kai (吕凯), Chen Jing (陈静), Luo Jie-Xin (罗杰馨), He Wei-Wei (何伟伟), Huang Jian-Qiang (黄建强), Chai Zhan (柴展), Wang Xi (王曦)   

  1. Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China
  • Received:2014-12-15 Revised:2015-03-03 Online:2015-08-05 Published:2015-08-05
  • Contact: Chen Jing E-mail:jchen@mail.sim.ac.cn

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摘要： The effects of back gate bias (BGEs) on radio-frequency (RF) performances in PD SOI nMOSFETs are presented in this paper. Floating body (FB) device, T-gate body-contact (TB) device, and tunnel diode body-contact (TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency (fT), maximum frequency of oscillation (fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance (gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance (gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.

关键词: silicon-on-insulator (SOI), back gate bias, tunnel diode body contact, radio-frequency (RF)

Abstract: The effects of back gate bias (BGEs) on radio-frequency (RF) performances in PD SOI nMOSFETs are presented in this paper. Floating body (FB) device, T-gate body-contact (TB) device, and tunnel diode body-contact (TDBC) device, of which the supply voltages are all 1.2 V, are compared under different back gate biases by different figures of merit, such as cut-off frequency (fT), maximum frequency of oscillation (fmax), etc. Because of the lack of a back gate conducting channel, the drain conductance (gd) of TDBC transistor shows a smaller degradation than those of the others, and the trans-conductance (gm) of TDBC is almost independent of back gate bias. The values of fT of TDBC are also kept nearly constant under different back gate biases. However, RF performances of FB and TB each show a significant degradation when the back gate bias is larger than ～ 20 V. The results indicate that TDBC structures could effectively improve the back gate bias in RF performance.

Key words: silicon-on-insulator (SOI), back gate bias, tunnel diode body contact, radio-frequency (RF)

中图分类号:  (Semiconductor devices)

  • 85.30.-z
73.43.Jn (Tunneling) 72.30.+q (High-frequency effects; plasma effects)