中国物理B ›› 2012, Vol. 21 ›› Issue (6): 66105-066105.doi: 10.1088/1674-1056/21/6/066105
• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇 下一篇
秦希峰a c, 李洪珍b, 李双a, 冀子武c, 王绘凝c, 王凤翔a, 付刚a
Qin Xi-Feng(秦希峰)a)c)†, Li Hong-Zhen(李洪珍)b), Li Shuang(李双)a), Ji Zi-Wu(冀子武) c), Wang Hui-Ning(王绘凝)c), Wang Feng-Xiang(王凤翔)a), and Fu Gang(付刚)a)
摘要: The annealing behaviour of 400 keV Er ions at a fluence of 2 × 1015 cm-2 implanted into silicon-on-insulator (SOI) samples is investigated by Rutherford backscattering spectrometry of 2.1 MeV He2+ ions with a multiple scattering model. It is found that the damage close to the SOI surface is almost removed after being annealed in O2 and N2 atmospheres, successively, at 900 ℃, and that only a small number of the Er atoms segregated to the surface of the SOI sample, whereas a large number of Er atoms diffused to a deeper position because of the affinity of Er for oxygen. For the SOI sample co-implanted with Er and O ions, there is no evident outdiffusion of Er atoms to the SOI surface after being annealed in N2 atmosphere at 900 ℃.
中图分类号: (Ion radiation effects)