A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

doi:10.1088/1674-1056/21/4/047303

中国物理B ›› 2012, Vol. 21 ›› Issue (4): 47303-047303.doi: 10.1088/1674-1056/21/4/047303

张健¹,何进¹ ²,周幸叶¹,张立宁¹,马玉涛²,陈沁²,张勖凯²,杨张²,王睿斐²,韩雨²,陈文新³

收稿日期:2011-07-26 修回日期:2011-10-26 出版日期:2012-02-29 发布日期:2012-02-29
通讯作者: 何进,frankhe@pku.edu.cn E-mail:frankhe@pku.edu.cn

A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

Zhang Jian(张健)^a), He Jin(何进)^{a) b)†}, Zhou Xing-Ye(周幸叶)^a), Zhang Li-Ning(张立宁)^a), Ma Yu-Tao(马玉涛)^b), Chen Qin(陈沁)^b), Zhang Xu-Kai(张勖凯)^b), Yang Zhang(杨张)^b), Wang Rui-Fei(王睿斐)^b), HanYu(韩雨)^b), and Chan Mansun(陈文新)^c)

a. Tera-Scale Research Centre (TSRC), School of Electronics Engineering and Computer Science (EECS), Peking University, Beijing 100871, China;
b. Peking University Shenzhen System on Chip (SOC) Key Laboratory, PKU-HKUST Shenzhen-Hongkong Institution, W303, West Tower, IER Bldg, Hi-Tech Industrial Park South, Shenzhen 518057, China;
c. Department of Electronics and Computer Engineering (ECE), Hong Kong University of Science and Technology, Kowloon, Clearwater Bay, Hong Kong, China

Received:2011-07-26 Revised:2011-10-26 Online:2012-02-29 Published:2012-02-29
Contact: He Jin,frankhe@pku.edu.cn E-mail:frankhe@pku.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 60876027), the State Key Program of the National Natural Science Foundation of China (Grant No. 61036004), the Shenzhen Science and Technology Foundation, China (Grant No. CXB201005250031A), the Fundamental Research Project of Shenzhen Science and Technology Foundation, China (Grant No. JC201005280670A), and the International Collaboration Project of Shenzhen Science & Technology Foundation, China (Grant No. ZYA2010006030006A).

摘要/Abstract

Abstract: A unified charge-based model for fully depleted silicon-on-insulator (SOI) metal-oxide semiconductor field-effect transistors (MOSFETs) is presented. The proposed model is accurate and applicable from intrinsic to heavily doped channels with various structure parameters. The framework starts from the one-dimensional Poisson-Boltzmann equation, and based on the full depletion approximation, an accurate inversion charge density equation is obtained. With the inversion charge density solution, the unified drain current expression is derived, and a unified terminal charge and intrinsic capacitance model is also derived in the quasi-static case. The validity and accuracy of the presented analytic model is proved by numerical simulations.

Key words: charge-based model, silicon-on-insulator metal-oxide semiconductor field-effect transistors, compact model, double gate

中图分类号: (Semiconductor-insulator-semiconductor structures)

73.40.Ty

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 61.44.Br (Quasicrystals)

张健, 何进, 周幸叶, 张立宁, 马玉涛, 陈沁, 张勖凯, 杨张, 王睿斐, 韩雨, 陈文新. [J]. 中国物理B, 2012, 21(4): 47303-047303.

Zhang Jian(张健), He Jin(何进), Zhou Xing-Ye(周幸叶), Zhang Li-Ning(张立宁), Ma Yu-Tao(马玉涛), Chen Qin(陈沁), Zhang Xu-Kai(张勖凯), Yang Zhang(杨张), Wang Rui-Fei(王睿斐), HanYu(韩雨), and Chan Mansun(陈文新) . A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel[J]. Chin. Phys. B, 2012, 21(4): 47303-047303.

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A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel

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