Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

doi:10.1088/1674-1056/25/12/127304

中国物理B ›› 2016, Vol. 25 ›› Issue (12): 127304-127304.doi: 10.1088/1674-1056/25/12/127304

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

Yi-Tao He(何逸涛), Ming Qiao(乔明), Bo Zhang(张波)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2016-07-27 修回日期:2016-08-25 出版日期:2016-12-05 发布日期:2016-12-05
通讯作者: Ming Qiao E-mail:qiaoming@uestc.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61376080 and 61674027) and the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2014A030313736 and 2016A030311022).

Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

Yi-Tao He(何逸涛), Ming Qiao(乔明), Bo Zhang(张波)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2016-07-27 Revised:2016-08-25 Online:2016-12-05 Published:2016-12-05
Contact: Ming Qiao E-mail:qiaoming@uestc.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61376080 and 61674027) and the Natural Science Foundation of Guangdong Province, China (Grant Nos. 2014A030313736 and 2016A030311022).

摘要/Abstract

摘要：

A novel ultralow turnoff loss dual-gate silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) is proposed. The proposed SOI LIGBT features an extra trench gate inserted between the p-well and n-drift, and an n-type carrier stored (CS) layer beneath the p-well. In the on-state, the extra trench gate acts as a barrier, which increases the carrier density at the cathode side of n-drift region, resulting in a decrease of the on-state voltage drop (V_on). In the off-state, due to the uniform carrier distribution and the assisted depletion effect induced by the extra trench gate, large number of carriers can be removed at the initial turnoff process, contributing to a low turnoff loss (E_off). Moreover, owing to the dual-gate field plates and CS layer, the carrier density beneath the p-well can greatly increase, which further improves the tradeoff between E_off and V_on. Simulation results show that E_off of the proposed SOI LIGBT can decrease by 77% compared with the conventional trench gate SOI LIGBT at the same V_on of 1.1 V.

关键词: lateral insulated gate bipolar transistor (LIGBT), turnoff loss, trench gate barrier, carrier stored layer

Abstract:

Key words: lateral insulated gate bipolar transistor (LIGBT), turnoff loss, trench gate barrier, carrier stored layer

中图分类号: (Semiconductor-insulator-semiconductor structures)

73.40.Ty

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.Tv (Field effect devices)

何逸涛, 乔明, 张波. Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer[J]. 中国物理B, 2016, 25(12): 127304-127304.

Yi-Tao He(何逸涛), Ming Qiao(乔明), Bo Zhang(张波). Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer[J]. Chin. Phys. B, 2016, 25(12): 127304-127304.

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Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

Ultralow turnoff loss dual-gate SOI LIGBT with trench gate barrier and carrier stored layer

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