A unified charge-based model for SOI MOSFETs applicable from intrinsic to heavily doped channel
张健, 何进, 周幸叶, 张立宁, 马玉涛, 陈沁, 张勖凯, 杨张, 王睿斐, 韩雨, 陈文新
中国物理B . 2012, (4): 47303 -047303 .  DOI: 10.1088/1674-1056/21/4/047303