中国物理B ›› 2012, Vol. 21 ›› Issue (1): 17103-017103.doi: 10.1088/1674-1056/21/1/017103

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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

陈弘1, 王占国2, 曹芝芳3, 林兆军3, 吕元杰3, 栾崇彪3, 于英霞3   

  1. (1)Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; (2)Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China; (3)School of Physics, Shandong University, Jinan 250100, China
  • 收稿日期:2011-07-29 修回日期:2011-08-24 出版日期:2012-01-15 发布日期:2012-01-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 10774090) and the National Basic Research Program of China (Grant No. 2007CB936602).

Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes

Cao Zhi-Fang(曹芝芳)a), Lin Zhao-Jun(林兆军)a)†, LŰ Yuan-Jie(吕元杰)a), Luan Chong-Biao(栾崇彪)a), Yu Ying-Xia(于英霞)a), Chen Hong(陈弘)b), and Wang Zhan-Guo(王占国)c)   

  1. a School of Physics, Shandong University, Jinan 250100, China; b Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; c Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2011-07-29 Revised:2011-08-24 Online:2012-01-15 Published:2012-01-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 10774090) and the National Basic Research Program of China (Grant No. 2007CB936602).

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摘要： Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (RS) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs.

关键词: AlGaN/AlN/GaN heterostructures, Schottky barrier diodes, power consumption, series resistance

Abstract: Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (RS) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs.

Key words: AlGaN/AlN/GaN heterostructures, Schottky barrier diodes, power consumption, series resistance

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
73.40.Cg (Contact resistance, contact potential) 51.50.+v (Electrical properties)