中国物理B ›› 2012, Vol. 21 ›› Issue (1): 17103-017103.doi: 10.1088/1674-1056/21/1/017103
陈弘1, 王占国2, 曹芝芳3, 林兆军3, 吕元杰3, 栾崇彪3, 于英霞3
Cao Zhi-Fang(曹芝芳)a), Lin Zhao-Jun(林兆军)a)†, LŰ Yuan-Jie(吕元杰)a), Luan Chong-Biao(栾崇彪)a), Yu Ying-Xia(于英霞)a), Chen Hong(陈弘)b), and Wang Zhan-Guo(王占国)c)
摘要: Rectangular AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) were fabricated, and the gate and the source of the HFETs consisted of AlGaN/AlN/GaN Schottky barrier diodes (SBDs). Based on the measured forward current-voltage and the capacitance-voltage characteristics of the AlGaN/AlN/GaN SBDs, the series resistance under the Schottky contacts (RS) was calculated using the method of power consumption, which has been proved to be valid. Finally, the method of power consumption for calculating RS was successfully used to study the two-dimensional electron gas electron mobility for a series of circular AlGaN/AlN/GaN SBDs. It is shown that the series resistance under the Schottky contacts cannot be neglected and is important for analysing and characterizing the AlGaN/AlN/GaN SBDs and the AlGaN/AlN/GaN HFETs.
中图分类号: (III-V semiconductors)