Chin. Phys. B ›› 2012, Vol. 21 ›› Issue (12): 127201-127201.doi: 10.1088/1674-1056/21/12/127201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

郭伟玲, 闫薇薇, 朱彦旭, 刘建朋, 丁艳, 崔德胜, 吴国庆   

  1. Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2012-03-30 修回日期:2012-05-09 出版日期:2012-11-01 发布日期:2012-11-01
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 11002013201102) and the National Key Technology R & D Program of China (Grant No. 2011BAE01B14).

Analysis on electrical characteristics of high-voltage GaN-based light-emitting diodes

Guo Wei-Ling (郭伟玲), Yan Wei-Wei (闫薇薇), Zhu Yan-Xu (朱彦旭), Liu Jian-Peng (刘建朋), Ding Yan (丁艳), Cui De-Sheng (崔德胜), Wu Guo-Qing (吴国庆)   

  1. Key Laboratory of Opto-electronics Technology, Beijing University of Technology, Beijing 100124, China
  • Received:2012-03-30 Revised:2012-05-09 Online:2012-11-01 Published:2012-11-01
  • Contact: Guo Wei-Ling E-mail:guoweiling@bjut.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 11002013201102) and the National Key Technology R & D Program of China (Grant No. 2011BAE01B14).

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摘要： In order to investigate their electrical characteristics, high-voltage light-emitting-diodes (HV-LEDs) each containing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors (IFs) of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined. The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of failure cell is 76.8 Ω, while that of normal cell is 21.3 Ω. The scanning electron microscope (SEM) image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LED needs to be optimized.

关键词: high-voltage light-emitting diode, electrical characteristics, ideality factor, series resistance

Abstract: In order to investigate their electrical characteristics, high-voltage light-emitting-diodes (HV-LEDs) each containing four cells in series are fabricated. The electrical parameters including varying voltage and parasitic effect are studied. It is shown that the ideality factors (IFs) of the HV-LEDs with different numbers of cells are 1.6, 3.4, 4.7, and 6.4. IF increases linearly with the number of cells increasing. Moreover, the performance of the HV-LED with failure cells is examined. The analysis indicates that the failure cell has a parallel resistance which induces the leakage of the failure cell. The series resistance of failure cell is 76.8 Ω, while that of normal cell is 21.3 Ω. The scanning electron microscope (SEM) image indicates that different metal layers do not contact well. It is hard to deposit the metal layers in the deep isolation trenches. The fabrication process of HV-LED needs to be optimized.

Key words: high-voltage light-emitting diode, electrical characteristics, ideality factor, series resistance

中图分类号:  (III-V and II-VI semiconductors)

  • 72.80.Ey
73.40.Cg (Contact resistance, contact potential) 73.61.Ey (III-V semiconductors) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)