Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

doi:10.1088/1674-1056/27/9/097203

中国物理B ›› 2018, Vol. 27 ›› Issue (9): 97203-097203.doi: 10.1088/1674-1056/27/9/097203

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

Yi-Dong Wang(王一栋), Jun Chen(陈俊)

School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China

收稿日期:2018-04-21 修回日期:2018-06-30 出版日期:2018-09-05 发布日期:2018-09-05
通讯作者: Jun Chen E-mail:junchen@suda.edu.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61774108) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China.

Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

Yi-Dong Wang(王一栋), Jun Chen(陈俊)

School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China

Received:2018-04-21 Revised:2018-06-30 Online:2018-09-05 Published:2018-09-05
Contact: Jun Chen E-mail:junchen@suda.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61774108) and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, Ministry of Education of China.

摘要/Abstract

摘要：

The capacitance-voltage (C-V) characteristic of the TiW/p-InP Schottky barrier diodes (SBDs) is analyzed considering the effects of the interface state (N_ss), series resistance (R_s), and deep level defects. The C-V of the Schottky contact is modeled based on the physical mechanism of the interfacial state and series resistance effect. The fitting coefficients α and β are used to reflect the N_ss and R_s on the C-V characteristics, respectively. The α decreases with the increase of frequency, while β increases with the increase of frequency. The capacitance increases with the increase of α and the decrease of β. From our model, the peak capacitance and its position can be estimated. The experimental value is found to be larger than the calculated one at the lower voltage. This phenomenon can be explained by the effect of deep level defects.

关键词: Schottky barrier diode, interface state, series resistance

Abstract:

Key words: Schottky barrier diode, interface state, series resistance

中图分类号: (III-V and II-VI semiconductors)

72.80.Ey

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.61.Ey (III-V semiconductors) 78.20.Bh (Theory, models, and numerical simulation)

王一栋, 陈俊. Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode[J]. 中国物理B, 2018, 27(9): 97203-097203.

Yi-Dong Wang(王一栋), Jun Chen(陈俊). Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode[J]. Chin. Phys. B, 2018, 27(9): 97203-097203.

参考文献 28

[1]	Li C, Xue C L, Li C B, Liu Z, Cheng B W and Wang Q M 2013 Chin. Phys. B 22 118503 doi: 10.1088/1674-1056/22/11/118503
[2]	Chen Q T, Huang Y Q, Fei J R, Duan X F, Liu K, Liu F, Kang C, Wang J C, Fang W J and Ren X M 2015 Chin. Phys. B 24 108506 doi: 10.1088/1674-1056/24/10/108506
[3]	Neamen Donald A 1992 Semiconductor Physics and Devices (Irwin, Boston, MA)
[4]	Wilmsen C 1985 Physics and Chemistry of Ⅲ-V Compound Semiconductor Interfaces (New York:Plenum Press)
[5]	Holloway P H and McGuire G E 1995 Handbook of Compound Semiconductors:Growth, Processing, Characterization, and Device (Noyes, New Jersey, NJ)
[6]	Jayant Baliga B 2005 SiC Power Devices (Singapore:World Scientific Publishing Co. Pte. Ltd)
[7]	Sze S M and Ng K K 2007 Physics of Semiconductor Devices (3rd Edn.) (New York:Wiley)
[8]	Chen J, Wang Q, Lv J, Tang H and Li X 2015 J. Alloys Compd. 649 1220 doi: 10.1016/j.jallcom.2015.07.239
[9]	Wang Q, Chen J, Tang H and Li X 2016 Semicond. Sci. Technol. 31 065023 doi: 10.1088/0268-1242/31/6/065023
[10]	Uslu H, Altındal S, Aydemir U, Dö kmeb I and Afandiyeva I M 2010 J. Alloys Compd. 503 96 doi: 10.1016/j.jallcom.2010.04.210
[11]	Afandiyeva I M, Demirezen S and Altındal S 2013 J. Alloys. Compd. 552 423 doi: 10.1016/j.jallcom.2012.11.093
[12]	Yokoyama N, Ohnishi T, Odani K, Onodera H and Abe M 1982 IEEE Trans. Electron. Devices 29 1541 doi: 10.1109/T-ED.1982.20912
[13]	Reddy V, Silpa D, Yun H and Choi C 2014 Superlattices and Microstructures 71 134 doi: 10.1016/j.spmi.2014.03.016
[14]	Karatas S and Turut A 2010 Microelectron. Reliab. 50 351 doi: 10.1016/j.microrel.2009.10.017
[15]	Kaya A, Sevgili O and Altındal S 2014 Int. J. Mod. Phys. B 28 1450104 doi: 10.1142/S0217979214501045
[16]	Gupta S K, Shankar B, Taube W R, Singh J and Akhtar 2014 J. Physica B 434 44 doi: 10.1016/j.physb.2013.10.042
[17]	Chekir F, Barret C and Vapaille A 1983 J. Appl. Phys. 54 6474 doi: 10.1063/1.331875
[18]	Arslan E, Butun S, Safak Y, Uslu H, Tascıoglu I, Altındal S and Ozbay E 2011 Microelectron. Reliab. 51 370 doi: 10.1016/j.microrel.2010.08.022
[19]	Ayyildiz E, Nuholu C and Turut A 2002 J. Electron. Mater. 31 119 doi: 10.1007/s11664-002-0157-9
[20]	Sharma A, Kumar P, Singh B, Chaudhuri S R and Ghosh S 2011 Appl. Phys. Lett. 99 023301 doi: 10.1063/1.3607955
[21]	Schroder D K 2006 Semiconductor Material and Device Characterization (Hoboken:John Wiley & Sons, Inc) doi: onductor Material and Device Characterization ???Hoboken:John Wiley
[22]	Kumar V, Kaminski N, Maan A S and Akhtar J 2016 Phys.Status. Solidi. A 213 193 doi: 10.1002/pssa.201532454
[23]	Korucu D, Turut A, Turan R and Altindal S 2013 Mater. Sci. Semicond. Process. 16 344 doi: 10.1016/j.mssp.2012.09.015
[24]	Demirezen S, ÖzavcıE and Altındal S 2014 Mater. Sci. Semicond. Process. 23 1 doi: 10.1016/j.mssp.2014.02.022
[25]	Bilkan Ç, Gümüş A and Altındal Ş 2015 Mater. Sci. Semicond. Process. 39 484 doi: 10.1016/j.mssp.2015.05.044
[26]	Altındal S and Uslu H 2011 J. Appl. Phys. 109 074503 doi: 10.1063/1.3554479
[27]	VIlchenko V, Marin V V, Lin S D, Panarin K Y, Buyanin A A and Tretyak O V 2008 J. Phys. D:Appl. Phys. 41 235107 doi: 10.1088/0022-3727/41/23/235107
[28]	Lin S D, Ilchenko V V, Marin V V, Panarin K Y, Buyanin A A and Tretyak O V 2008 Appl. Phys. Lett. 93 103103 doi: 10.1063/1.2975169

Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode

RichHTML

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 28

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Shao-Yong Huo(霍绍勇), Long-Chao Yao(姚龙超), Kuan-Hong Hsieh(谢冠宏), Chun-Ming Fu(符纯明), Shih-Chia Chiu(邱士嘉), Xiao-Chao Gong(龚小超), and Jian Deng(邓健). Tunable topological interface states and resonance states of surface waves based on the shape memory alloy[J]. 中国物理B, 2023, 32(3): 34303-034303.
[2]	Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波). High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure[J]. 中国物理B, 2023, 32(1): 17305-017305.
[3]	Zeng-Ping Su(苏增平), Tong-Tong Wei(魏彤彤), and Yue-Ke Wang(王跃科). Dual-channel tunable near-infrared absorption enhancement with graphene induced by coupled modes of topological interface states[J]. 中国物理B, 2022, 31(8): 87804-087804.
[4]	Jianfei Chen(陈健菲), Chaohua Wu(吴超华), Jingtao Fan(樊景涛), and Gang Chen(陈刚). Characterization of topological phase of superlattices in superconducting circuits[J]. 中国物理B, 2022, 31(8): 88501-088501.
[5]	Ling-Mei Zhang(张令梅), Yuan-Yuan Miao(苗圆圆), Zhi-Peng Cao(曹智鹏), Shuai Qiu(邱帅), Guang-Ping Zhang(张广平), Jun-Feng Ren(任俊峰), Chuan-Kui Wang(王传奎), and Gui-Chao Hu(胡贵超). Bias-induced reconstruction of hybrid interface states in magnetic molecular junctions[J]. 中国物理B, 2022, 31(5): 57303-057303.
[6]	Qiliang Wang(王启亮), Tingting Wang(王婷婷), Taofei Pu(蒲涛飞), Shaoheng Cheng(成绍恒),Xiaobo Li(李小波), Liuan Li(李柳暗), and Jinping Ao(敖金平). Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode[J]. 中国物理B, 2022, 31(5): 57702-057702.
[7]	Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文). Lateral β-Ga₂O₃ Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics[J]. 中国物理B, 2022, 31(4): 47302-047302.
[8]	Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田). Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga₂O₃/p-diamond heterojunction[J]. 中国物理B, 2022, 31(10): 108105-108105.
[9]	Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Design and simulation of AlN-based vertical Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67305-067305.
[10]	Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟), Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵). Device topological thermal management of β-Ga₂O₃ Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67302-067302.
[11]	Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅). Degradation of β-Ga₂O₃ Schottky barrier diode under swift heavy ion irradiation[J]. 中国物理B, 2021, 30(5): 56110-056110.
[12]	赵亚文, 李柳暗, 阙陶陶, 丘秋凌, 何亮, 刘振兴, 张津玮, 吴千树, 陈佳, 吴志盛, 刘扬. Experimental evaluation of interface states during time-dependent dielectric breakdown of GaN-based MIS-HEMTs with LPCVD-SiN_x gate dielectric[J]. 中国物理B, 2020, 29(6): 67203-067203.
[13]	王伟凡, 王建峰, 张育民, 李腾坤, 熊瑞, 徐科. Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination[J]. 中国物理B, 2020, 29(4): 47305-047305.
[14]	朱青, 马晓华, 陈怡霖, 侯斌, 祝杰杰, 张濛, 武玫, 杨凌, 郝跃. Negative bias-induced threshold voltage instability and zener/interface trapping mechanism in GaN-based MIS-HEMTs[J]. 中国物理B, 2020, 29(4): 47304-047304.
[15]	刘增, 李培刚, 支钰崧, 王小龙, 褚旭龙, 唐为华. Review of gallium oxide based field-effect transistors and Schottky barrier diodes[J]. 中国物理B, 2019, 28(1): 17105-017105.