Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

doi:10.1088/1674-1056/22/7/077102

中国物理B ›› 2013, Vol. 22 ›› Issue (7): 77102-077102.doi: 10.1088/1674-1056/22/7/077102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

吕元杰^a, 冯志红^a, 顾国栋^a, 敦少博^a, 尹甲运^a, 韩婷婷^a, 盛百城^a, 蔡树军^a, 刘波^a, 林兆军^b

a Science and Technology on Application Specific Integrated Circuit (ASIC) Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China

收稿日期:2012-12-05 修回日期:2013-02-25 出版日期:2013-06-01 发布日期:2013-06-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60890192, 60876009, and 11174182) and the Foundation of Key Laboratory, China.

Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

Lü Yuan-Jie (吕元杰)^a, Feng Zhi-Hong (冯志红)^a, Gu Guo-Dong (顾国栋)^a, Dun Shao-Bo (敦少博)^a, Yin Jia-Yun (尹甲运)^a, Han Ting-Ting (韩婷婷)^a, Sheng Bai-Cheng (盛百城)^a, Cai Shu-Jun (蔡树军)^a, Liu Bo (刘波)^a, Lin Zhao-Jun (林兆军)^b

a Science and Technology on Application Specific Integrated Circuit (ASIC) Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051, China;
b School of Physics, Shandong University, Jinan 250100, China

Received:2012-12-05 Revised:2013-02-25 Online:2013-06-01 Published:2013-06-01
Contact: Feng Zhi-Hong E-mail:blueledviet@yahoo.com.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60890192, 60876009, and 11174182) and the Foundation of Key Laboratory, China.

摘要/Abstract

摘要： An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones gotten by using the capacitance-voltage (C-V) curve integration and the plot of dV/zd(lnI) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.

关键词: AlGaN/GaN heterostructure, Schottky diode, threshold voltage, series resistance

Abstract: An Ni/Au Schottky contact on an AlGaN/GaN heterostructure has been prepared. By using the peak-conductance model, the threshold voltage and the series resistance of the AlGaN/GaN diode are simultaneously extracted from the conductance-voltage (G-V) curve and found to be in good agreement with the ones gotten by using the capacitance-voltage (C-V) curve integration and the plot of dV/zd(lnI) versus current I. Thus, a method of directly and simultaneously extracting both the threshold voltage and the series resistance from the conductance-voltage curve for the AlGaN/GaN Schottky diode is developed.

Key words: AlGaN/GaN heterostructure, Schottky diode, threshold voltage, series resistance

中图分类号: (III-V semiconductors)

71.55.Eq

74.78.Fk (Multilayers, superlattices, heterostructures) 84.37.+q (Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.))

吕元杰, 冯志红, 顾国栋, 敦少博, 尹甲运, 韩婷婷, 盛百城, 蔡树军, 刘波, 林兆军. Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode[J]. 中国物理B, 2013, 22(7): 77102-077102.

Lü Yuan-Jie (吕元杰), Feng Zhi-Hong (冯志红), Gu Guo-Dong (顾国栋), Dun Shao-Bo (敦少博), Yin Jia-Yun (尹甲运), Han Ting-Ting (韩婷婷), Sheng Bai-Cheng (盛百城), Cai Shu-Jun (蔡树军), Liu Bo (刘波), Lin Zhao-Jun (林兆军). Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode[J]. Chin. Phys. B, 2013, 22(7): 77102-077102.

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Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

Directly extracting both threshold voltage and series resistance from conductance-voltage curve for AlGaN/GaN Schottky diode

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