中国物理B ›› 2015, Vol. 24 ›› Issue (9): 97303-097303.doi: 10.1088/1674-1056/24/9/097303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

钟健a, 姚尧a, 郑越a, 杨帆a, 倪毅强a, 贺致远a, 沈震a, 周桂林a, 周德秋a, 吴志盛a, 张伯君b, 刘扬a   

  1. a School of Physics and Engineering, Institute of Power Electronics and Control Technology, Sun Yat-Sen University, Guangzhou 510275, China;
    b State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
  • 收稿日期:2015-03-03 修回日期:2015-04-13 出版日期:2015-09-05 发布日期:2015-09-05
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Program of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph. D. Programs Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics, China (Grant No. IOSKL2014KF17).

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

Zhong Jian (钟健)a, Yao Yao (姚尧)a, Zheng Yue (郑越)a, Yang Fan (杨帆)a, Ni Yi-Qiang (倪毅强)a, He Zhi-Yuan (贺致远)a, Shen Zhen (沈震)a, Zhou Gui-Lin (周桂林)a, Zhou De-Qiu (周德秋)a, Wu Zhi-Sheng (吴志盛)a, Zhang Bai-Jun (张伯君)b, Liu Yang (刘扬)a   

  1. a School of Physics and Engineering, Institute of Power Electronics and Control Technology, Sun Yat-Sen University, Guangzhou 510275, China;
    b State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou 510275, China
  • Received:2015-03-03 Revised:2015-04-13 Online:2015-09-05 Published:2015-09-05
  • Contact: Liu Yang E-mail:liuy69@mail.sysu.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51177175 and 61274039), the National Basic Research Program of China (Grant Nos. 2010CB923200 and 2011CB301903), the Ph. D. Programs Foundation of Ministry of Education of China (Grant No. 20110171110021), the International Science and Technology Collaboration Program of China (Grant No. 2012DFG52260), the National High Technology Research and Development Program of China (Grant No. 2014AA032606), the Science and Technology Plan of Guangdong Province, China (Grant No. 2013B010401013), and the Opened Fund of the State Key Laboratory on Integrated Optoelectronics, China (Grant No. IOSKL2014KF17).

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摘要： The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICP-recessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency (RF) power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power. Based on detailed current-voltage-temperature (I-V-T) measurements, the barrier height of thermionic-field emission (TFE) from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel-Poole (FP) emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.

关键词: AlGaN/GaN Schottky barrier diodes, recessed anode, etching damage, tunneling

Abstract: The influences of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with ICP-recessed anode was investigated for the first time. It was found that the turn-on voltage is decreased with the increase of dry-etching power. Furthermore, the leakage currents in the reverse bias region above pinch-off voltage rise as radio frequency (RF) power increases, while below pinch-off voltage, leakage currents tend to be independent of RF power. Based on detailed current-voltage-temperature (I-V-T) measurements, the barrier height of thermionic-field emission (TFE) from GaN is lowered as RF power increases, which results in early conduction. The increase of leakage current can be explained by Frenkel-Poole (FP) emission that higher dry-etching damage in the sidewall leads to the higher tunneling current, while below pinch-off voltage, the leakage is only related to the AlGaN surface, which is independent of RF power.

Key words: AlGaN/GaN Schottky barrier diodes, recessed anode, etching damage, tunneling

中图分类号:  (Surface double layers, Schottky barriers, and work functions)

  • 73.30.+y
81.05.Ea (III-V semiconductors) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)