中国物理B ›› 2019, Vol. 28 ›› Issue (1): 17105-017105.doi: 10.1088/1674-1056/28/1/017105
所属专题: TOPICAL REVIEW — Photodetector: Materials, physics, and applications
• SPECIAL TOPIC—Recent advances in thermoelectric materials and devices • 上一篇 下一篇
Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华)
收稿日期:
2018-08-13
修回日期:
2018-11-04
出版日期:
2019-01-05
发布日期:
2019-01-05
通讯作者:
Pei-Gang Li, Wei-Hua Tang
E-mail:pgli@bupt.edu.cn;whtang@bupt.edu.cn
基金资助:
Zeng Liu(刘增)1,2, Pei-Gang Li(李培刚)1,2, Yu-Song Zhi(支钰崧)1,2, Xiao-Long Wang(王小龙)1,2, Xu-Long Chu(褚旭龙)1,3, Wei-Hua Tang(唐为华)1,2
Received:
2018-08-13
Revised:
2018-11-04
Online:
2019-01-05
Published:
2019-01-05
Contact:
Pei-Gang Li, Wei-Hua Tang
E-mail:pgli@bupt.edu.cn;whtang@bupt.edu.cn
Supported by:
摘要: Gallium oxide (Ga2O3), a typical ultra wide bandgap semiconductor, with a bandgap of~4.9 eV, critical breakdown field of 8 MV/cm, and Baliga's figure of merit of 3444, is promising to be used in high-power and high-voltage devices. Recently, a keen interest in employing Ga2O3 in power devices has been aroused. Many researches have verified that Ga2O3 is an ideal candidate for fabricating power devices. In this review, we summarized the recent progress of field-effect transistors (FETs) and Schottky barrier diodes (SBDs) based on Ga2O3, which may provide a guideline for Ga2O3 to be preferably used in power devices fabrication.
中图分类号: (Metal-insulator transitions and other electronic transitions)
刘增, 李培刚, 支钰崧, 王小龙, 褚旭龙, 唐为华. Review of gallium oxide based field-effect transistors and Schottky barrier diodes[J]. 中国物理B, 2019, 28(1): 17105-017105.
Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华). Review of gallium oxide based field-effect transistors and Schottky barrier diodes[J]. Chin. Phys. B, 2019, 28(1): 17105-017105.
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