Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode
陈丰平, 张玉明, 张义门, 汤晓燕, 王悦湖, 陈文豪
Edge termination study and fabrication of a 4H–SiC junction barrier Schottky diode
Chen Feng-Ping(陈丰平), Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), Tang Xiao-Yan(汤晓燕), Wang Yue-Hu(王悦湖), and Chen Wen-Hao(陈文豪)
中国物理B
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2011, (11): 117301
-117301
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DOI: 10.1088/1674-1056/20/11/117301