中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47205-047205.doi: 10.1088/1674-1056/19/4/047205
黄俊毅, 范广涵, 郑树文, 牛巧利, 李述体, 曹健兴, 苏军, 章勇
Huang Jun-Yi(黄俊毅), Fan Guang-Han(范广涵)†, Zheng Shu-Wen(郑树文), Niu Qiao-Li(牛巧利), Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Su Jun(苏军), and Zhang Yong(章勇)
摘要: This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $\sim 5.65\times 10^{ - 5}$~$\Omega \cdot$cm$^{2}$ and show the transmittance of $\sim $98% at a wavelength of 440~nm when annealed at 500~\du. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21~V at an injection current of 20~mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20~mA in comparison with that of LEDs with conventional Ni/Au contacts.
中图分类号: (Light-emitting devices)