Electric-stress reliability and current collapse of different thickness SiNx passivated AlGaN/GaN high electron mobility transistors

doi:10.1088/1674-1056/19/4/047301

中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47301-047301.doi: 10.1088/1674-1056/19/4/047301

Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors

杨凌, 胡贵州, 郝跃, 马晓华, 全思, 杨丽媛, 姜守高

Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071,China

收稿日期:2009-06-16 修回日期:2009-08-04 出版日期:2010-04-15 发布日期:2010-04-15
基金资助:
Project supported by the State Key Program of National Natural Science Foundation of China (Grant No.~60736033).

Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors

Yang Ling(杨凌)^†, Hu Gui-Zhou(胡贵州), Hao Yue(郝跃)^‡, Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高)

Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071,China

Received:2009-06-16 Revised:2009-08-04 Online:2010-04-15 Published:2010-04-15
Supported by:
Project supported by the State Key Program of National Natural Science Foundation of China (Grant No.~60736033).

摘要/Abstract

摘要： This paper investigates the impact of electrical degradation and current collapse on different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiN_x passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiN_x passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiN_x passivation located in the gate-drain region. As the thickness of SiN_x passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH₃ flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.

Abstract: This paper investigates the impact of electrical degradation and current collapse on different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors. It finds that higher thickness SiN_x passivation can significantly improve the high-electric-field reliability of a device. The degradation mechanism of the SiN_x passivation layer under ON-state stress has also been discussed in detail. Under the ON-state stress, the strong electric-field led to degradation of SiN_x passivation located in the gate-drain region. As the thickness of SiN_x passivation increases, the density of the surface state will be increased to some extent. Meanwhile, it is found that the high NH₃ flow in the plasma enhanced chemical vapour deposition process could reduce the surface state and suppress the current collapse.

Key words: SiN_x passivated AlGaN/GaN high electron mobility transistors, degradation, current collapse, surface states

中图分类号: (Field effect devices)

85.30.Tv

85.30.De (Semiconductor-device characterization, design, and modeling) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 81.65.Rv (Passivation) 73.50.Fq (High-field and nonlinear effects)

杨凌, 胡贵州, 郝跃, 马晓华, 全思, 杨丽媛, 姜守高. Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors[J]. 中国物理B, 2010, 19(4): 47301-047301.

Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高). Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors[J]. Chin. Phys. B, 2010, 19(4): 47301-047301.

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Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors

Electric-stress reliability and current collapse of different thickness SiN_x passivated AlGaN/GaN high electron mobility transistors

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