中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47204-047204.doi: 10.1088/1674-1056/19/4/047204

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Study of a 4H－SiC epitaxial n-channel MOSFET

汤晓燕, 张玉明, 张义门   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an {\rm 710071, China
  • 收稿日期:2009-07-13 修回日期:2009-07-25 出版日期:2010-04-15 发布日期:2010-04-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No.~60876061) and Advanced Research Foundation (Grant No.~51308040302).

Study of a 4H－SiC epitaxial n-channel MOSFET

Tang Xiao-Yan(汤晓燕)†, Zhang Yu-Ming(张玉明), and Zhang Yi-Men(张义门)   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2009-07-13 Revised:2009-07-25 Online:2010-04-15 Published:2010-04-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No.~60876061) and Advanced Research Foundation (Grant No.~51308040302).

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摘要： Epitaxial channel metal-oxide semiconductor field-effect transistors (MOSFETs) have been proposed as one possible way to avoid the problem of low inversion layers in traditional MOSFETs. This paper presents an equation of maximum depletion width modified which is more accurate than the original equation. A 4H--SiC epitaxial n-channel MOSFET using two-dimensional simulator ISE is simulated. Optimized structure would be realized based on the simulated results for increasing channel mobility.

Abstract: Epitaxial channel metal-oxide semiconductor field-effect transistors (MOSFETs) have been proposed as one possible way to avoid the problem of low inversion layers in traditional MOSFETs. This paper presents an equation of maximum depletion width modified which is more accurate than the original equation. A 4H--SiC epitaxial n-channel MOSFET using two-dimensional simulator ISE is simulated. Optimized structure would be realized based on the simulated results for increasing channel mobility.

Key words: SiC, epitaxial layer, MOSFET, mobility

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.30.De (Semiconductor-device characterization, design, and modeling)