Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

doi:10.1088/1674-1056/19/4/047205

中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47205-047205.doi: 10.1088/1674-1056/19/4/047205

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

黄俊毅, 范广涵, 郑树文, 牛巧利, 李述体, 曹健兴, 苏军, 章勇

Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

收稿日期:2009-07-25 修回日期:2009-08-29 出版日期:2010-04-15 发布日期:2010-04-15
基金资助:
Project supported by Science and Technology Planning Project of Guangdong Province (Grant No.~2007A010501008), the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No.~2009B090300338).

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

Huang Jun-Yi(黄俊毅), Fan Guang-Han(范广涵)^†, Zheng Shu-Wen(郑树文), Niu Qiao-Li(牛巧利), Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Su Jun(苏军), and Zhang Yong(章勇)

Institute of Opto-electronic Materials and Technology, South China Normal University, Guangzhou 510631, China

Received:2009-07-25 Revised:2009-08-29 Online:2010-04-15 Published:2010-04-15
Supported by:
Project supported by Science and Technology Planning Project of Guangdong Province (Grant No.~2007A010501008), the Production and Research Project of Guangdong Province and the Ministry of Education (Grant No.~2009B090300338).

摘要/Abstract

摘要： This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $\sim 5.65\times 10^{ - 5}$~$\Omega \cdot$cm$^{2}$ and show the transmittance of $\sim $98% at a wavelength of 440~nm when annealed at 500~\du. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21~V at an injection current of 20~mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20~mA in comparison with that of LEDs with conventional Ni/Au contacts.

Abstract: This paper reports that highly transparent and low resistance tantalum-doped indium tin oxide (Ta-doped ITO) films contacted to p-type GaN have been prepared by the electron-beam evaporation technique. The Ta-doped ITO contacts become Ohmic with a specific contact resistance of $\sim$$5.65\times 10^{ - 5}$ $\Omega \cdot$cm$^{2}$ and show the transmittance of $\sim $98% at a wavelength of 440~nm when annealed at 500 $^\circ$C. Blue light emitting diodes (LEDs) fabricated with Ta-doped ITO p-type Ohmic contact layers give a forward-bias voltage of 3.21 V at an injection current of 20 mA. It further shows that the output power of LEDs with Ta-doped ITO contacts is enhanced 62% at 20 mA in comparison with that of LEDs with conventional Ni/Au contacts.

Key words: p--GaN, tantalum-doped indium tin oxide (Ta-doped ITO), Ohmic contact, specific contact resistance

中图分类号: (Light-emitting devices)

85.60.Jb

73.40.Cg (Contact resistance, contact potential) 61.72.uj (III-V and II-VI semiconductors) 73.61.Ey (III-V semiconductors)

黄俊毅, 范广涵, 郑树文, 牛巧利, 李述体, 曹健兴, 苏军, 章勇. Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes[J]. 中国物理B, 2010, 19(4): 47205-047205.

Huang Jun-Yi(黄俊毅), Fan Guang-Han(范广涵), Zheng Shu-Wen(郑树文), Niu Qiao-Li(牛巧利), Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Su Jun(苏军), and Zhang Yong(章勇). Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes[J]. Chin. Phys. B, 2010, 19(4): 47205-047205.

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Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes

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