Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes
黄俊毅, 范广涵, 郑树文, 牛巧利, 李述体, 曹健兴, 苏军, 章勇
Improvement of the light output and contact resistance of InGaN-based light-emitting diodes based on tantalum-doped indium tin oxide as p-type electrodes
Huang Jun-Yi(黄俊毅), Fan Guang-Han(范广涵), Zheng Shu-Wen(郑树文), Niu Qiao-Li(牛巧利), Li Shu-Ti(李述体), Cao Jian-Xing(曹健兴), Su Jun(苏军), and Zhang Yong(章勇)
中国物理B
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2010, (4): 47205
-047205
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DOI: 10.1088/1674-1056/19/4/047205