The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

doi:10.1088/1674-1056/19/10/107301

中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107301-107301.doi: 10.1088/1674-1056/19/10/107301

The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

李劲, 刘红侠, 李斌, 曹磊, 袁博

Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2010-03-29 修回日期:2010-04-28 出版日期:2010-10-15 发布日期:2010-10-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200807010010).

The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

Li Jin(李劲)^†,Liu Hong-Xia(刘红侠),Li Bin(李斌),Cao Lei(曹磊), and Yuan Bo(袁博)

Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2010-03-29 Revised:2010-04-28 Online:2010-10-15 Published:2010-10-15
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083) and the Specialized Research Fund for the Doctoral Program of Higher Education of China (Grant No. 200807010010).

摘要/Abstract

摘要： Based on the exact resultant solution of two-dimensional Poisson's equation in strained Si and Si_{1 - X}Ge_X layer, a simple and accurate two-dimensional analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator (SGOI) MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects (SCE), the drain-induced barrier-lowering (DIBL) and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.

Abstract: Based on the exact resultant solution of two-dimensional Poisson's equation in strained Si and Si_1-XGe_X layer, a simple and accurate two-dimensional analytical model including surface channel potential, surface channel electric field, threshold voltage and subthreshold swing for fully depleted gate stack strained Si on silicon-germanium-on-insulator (SGOI) MOSFETs has been developed. The results show that this novel structure can suppress the short channel effects (SCE), the drain-induced barrier-lowering (DIBL) and improve the subthreshold performance in nanoelectronics application. The model is verified by numerical simulation. The model provides the basic designing guidance of gate stack strained Si on SGOI MOSFETs.

Key words: silicon-germanium-on-insulator MOSFETs, strained Si, short channel effects, the drain-induced barrier-lowering

中图分类号: (Surface double layers, Schottky barriers, and work functions)

73.30.+y

73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 73.61.-r (Electrical properties of specific thin films) 85.30.Tv (Field effect devices)

李劲, 刘红侠, 李斌, 曹磊, 袁博. The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs[J]. 中国物理B, 2010, 19(10): 107301-107301.

Li Jin(李劲),Liu Hong-Xia(刘红侠),Li Bin(李斌),Cao Lei(曹磊), and Yuan Bo(袁博). The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs[J]. Chin. Phys. B, 2010, 19(10): 107301-107301.

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The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs

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