中国物理B ›› 2021, Vol. 30 ›› Issue (6): 67701-067701.doi: 10.1088/1674-1056/abdb21

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Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure

Ji-Yao Du(都继瑶)1, Ji-Yu Zhou(周继禹)2, Xiao-Bo Li(李小波)2, Tao-Fei Pu(蒲涛飞)2, Liu-An Li(李柳暗)3,†, Xin-Zhi Liu(刘新智)3,‡, and Jin-Ping Ao(敖金平)2   

  1. 1 School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China;
    2 Institute of Technology and Science, Tokushima University, Tokushima, Japan;
    3 School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
  • 收稿日期:2020-12-08 修回日期:2021-01-08 接受日期:2021-01-13 出版日期:2021-05-18 发布日期:2021-06-17
  • 通讯作者: Liu-An Li, Xin-Zhi Liu E-mail:liliuan@mail.sysu.edu.cn;liuxzh39@mail.sysu.edu.cn
  • 基金资助:
    Project supported by the Fund from the Open Project Key Laboratory of Microelectronic Devices and Integrated Technology, China (Grant No. 202006), the Doctoral Research Support Foundation of Shenyang Ligong University, China (Grant No. 1010147000914), and the Science and Technology Program of Ningbo, China (Grant No. 2019B10129).

Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure

Ji-Yao Du(都继瑶)1, Ji-Yu Zhou(周继禹)2, Xiao-Bo Li(李小波)2, Tao-Fei Pu(蒲涛飞)2, Liu-An Li(李柳暗)3,†, Xin-Zhi Liu(刘新智)3,‡, and Jin-Ping Ao(敖金平)2   

  1. 1 School of Automation and Electrical Engineering, Shenyang Ligong University, Shenyang 110159, China;
    2 Institute of Technology and Science, Tokushima University, Tokushima, Japan;
    3 School of Physics, Sun Yat-Sen University, Guangzhou 510275, China
  • Received:2020-12-08 Revised:2021-01-08 Accepted:2021-01-13 Online:2021-05-18 Published:2021-06-17
  • Contact: Liu-An Li, Xin-Zhi Liu E-mail:liliuan@mail.sysu.edu.cn;liuxzh39@mail.sysu.edu.cn
  • Supported by:
    Project supported by the Fund from the Open Project Key Laboratory of Microelectronic Devices and Integrated Technology, China (Grant No. 202006), the Doctoral Research Support Foundation of Shenyang Ligong University, China (Grant No. 1010147000914), and the Science and Technology Program of Ningbo, China (Grant No. 2019B10129).

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摘要： Band alignment between NiOx and nonpolar GaN plane and between NiOx and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the unintentional-doped a-plane, m-plane, and r-plane GaN are comparable to each other, which means that all the substrates are of n-type with similar background carrier concentrations. However, the band offset at the NiOx/GaN interface presents obvious crystalline plane dependency although they are coated with the same NiOx films. By fitting the Ga 3d spectrum obtained from the NiOx/GaN interface, we find that relatively high Ga-O content at the interface corresponds to a small band offset. On the one hand, the high Ga-O content on the GaN surface will change the growth mode of NiOx. On the other hand, the affinity difference between Ga and O forms a dipole which will introduce an extra energy band bending.

关键词: GaN, NiOx, band alignment, vertical diode

Abstract: Band alignment between NiOx and nonpolar GaN plane and between NiOx and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the unintentional-doped a-plane, m-plane, and r-plane GaN are comparable to each other, which means that all the substrates are of n-type with similar background carrier concentrations. However, the band offset at the NiOx/GaN interface presents obvious crystalline plane dependency although they are coated with the same NiOx films. By fitting the Ga 3d spectrum obtained from the NiOx/GaN interface, we find that relatively high Ga-O content at the interface corresponds to a small band offset. On the one hand, the high Ga-O content on the GaN surface will change the growth mode of NiOx. On the other hand, the affinity difference between Ga and O forms a dipole which will introduce an extra energy band bending.

Key words: GaN, NiOx, band alignment, vertical diode

中图分类号:  (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)

  • 77.84.Bw
73.30.+y (Surface double layers, Schottky barriers, and work functions) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 52.59.Mv (High-voltage diodes)