中国物理B ›› 2021, Vol. 30 ›› Issue (6): 67701-067701.doi: 10.1088/1674-1056/abdb21
Ji-Yao Du(都继瑶)1, Ji-Yu Zhou(周继禹)2, Xiao-Bo Li(李小波)2, Tao-Fei Pu(蒲涛飞)2, Liu-An Li(李柳暗)3,†, Xin-Zhi Liu(刘新智)3,‡, and Jin-Ping Ao(敖金平)2
Ji-Yao Du(都继瑶)1, Ji-Yu Zhou(周继禹)2, Xiao-Bo Li(李小波)2, Tao-Fei Pu(蒲涛飞)2, Liu-An Li(李柳暗)3,†, Xin-Zhi Liu(刘新智)3,‡, and Jin-Ping Ao(敖金平)2
摘要: Band alignment between NiOx and nonpolar GaN plane and between NiOx and semipolar GaN plane are measured by x-ray photoelectron spectroscopy. They demonstrate that the maximum value of the valence band in the unintentional-doped a-plane, m-plane, and r-plane GaN are comparable to each other, which means that all the substrates are of n-type with similar background carrier concentrations. However, the band offset at the NiOx/GaN interface presents obvious crystalline plane dependency although they are coated with the same NiOx films. By fitting the Ga 3d spectrum obtained from the NiOx/GaN interface, we find that relatively high Ga-O content at the interface corresponds to a small band offset. On the one hand, the high Ga-O content on the GaN surface will change the growth mode of NiOx. On the other hand, the affinity difference between Ga and O forms a dipole which will introduce an extra energy band bending.
中图分类号: (Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)