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Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田). Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction[J]. 中国物理B, 2022, 31(10): 108105-108105. |
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Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉). Modulation of Schottky barrier in XSi2N4/graphene (X=Mo and W) heterojunctions by biaxial strain[J]. 中国物理B, 2022, 31(8): 87101-087101. |
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Haitao Zhou(周海涛), Lujia Cong(丛璐佳), Jiangang Ma(马剑钢), Bingsheng Li(李炳生), Haiyang Xu(徐海洋), and Yichun Liu(刘益春). Suppression of persistent photoconductivity in high gain Ga2O3 Schottky photodetectors[J]. 中国物理B, 2021, 30(12): 126104-126104. |
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Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃). Design and simulation of AlN-based vertical Schottky barrier diodes[J]. 中国物理B, 2021, 30(6): 67305-067305. |
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Ji-Yao Du(都继瑶), Ji-Yu Zhou(周继禹), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Xin-Zhi Liu(刘新智), and Jin-Ping Ao(敖金平). Band alignment between NiOx and nonpolar/semipolar GaN planes for selective-area-doped termination structure[J]. 中国物理B, 2021, 30(6): 67701-067701. |
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Chang Sun(孙畅), Xin-Yu Cao(曹新宇), Xi-Hui Wang(王西惠), Xiao-Le Qiu(邱潇乐), Zheng-Hui Fang(方铮辉), Yu-Jie Yuan(袁宇杰), Kai Liu(刘凯), and Xiao Zhang(张晓). Investigation of electronic, elastic, and optical properties of topological electride Ca3Pb via first-principles calculations[J]. 中国物理B, 2021, 30(5): 57104-057104. |
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Yu-Song Zhi(支钰崧), Wei-Yu Jiang(江为宇), Zeng Liu(刘增), Yuan-Yuan Liu(刘媛媛), Xu-Long Chu(褚旭龙), Jia-Hang Liu(刘佳航), Shan Li(李山), Zu-Yong Yan(晏祖勇), Yue-Hui Wang(王月晖), Pei-Gang Li(李培刚), Zhen-Ping Wu(吴真平), and Wei-Hua Tang(唐为华). High-responsivity solar-blind photodetector based on MOCVD-grown Si-doped β-Ga2O3 thin film[J]. 中国物理B, 2021, 30(5): 57301-057301. |
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Brahim Ait Ali, Reda Moubah, Abdelkader Boulezhar, Hassan Lassri. Temperature-dependent barrier height inhomogeneities in PTB7:PC71BM-based organic solar cells[J]. 中国物理B, 2020, 29(9): 98801-098801. |
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王伟凡, 王建峰, 张育民, 李腾坤, 熊瑞, 徐科. Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination[J]. 中国物理B, 2020, 29(4): 47305-047305. |
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杨超, 梁红伟, 张振中, 夏晓川, 张贺秋, 申人升, 骆英民, 杜国同. Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3[J]. 中国物理B, 2019, 28(4): 48502-048502. |
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李金岚, 李赟, 汪玲, 徐跃, 闫锋, 韩平, 纪小丽. Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode[J]. 中国物理B, 2019, 28(2): 27303-027303. |
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仲雪倩, 王珏, 王宝柱, 王珩宇, 郭清, 盛况. Investigations on mesa width design for 4H-SiC trench super junction Schottky diodes[J]. 中国物理B, 2018, 27(8): 87102-087102. |
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叶鑫, 夏晓川, 梁红伟, 李卓, 张贺秋, 杜国同, 崔兴柱, 梁晓华. Effect of Au/Ni/4H-SiC Schottky junction thermal stability on performance of alpha particle detection[J]. 中国物理B, 2018, 27(8): 87304-087304. |