中国物理B ›› 2021, Vol. 30 ›› Issue (3): 37303-.doi: 10.1088/1674-1056/abd46b

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

  

  • 收稿日期:2020-10-10 修回日期:2020-11-28 接受日期:2020-12-17 出版日期:2021-02-22 发布日期:2021-02-22

High-performing silicon-based germanium Schottky photodetector with ITO transparent electrode

Zhiwei Huang(黄志伟)1, Shaoying Ke(柯少颖)1, Jinrong Zhou(周锦荣) 1, Yimo Zhao(赵一默) 2, Wei Huang(黄巍) 2, Songyan Chen(陈松岩) 2, and Cheng Li(李成)2,†   

  1. 1 College of Physics and Information Engineering, Minnan Normal University, Zhangzhou 363000, China; 2 College of Physics Science and Technology, Xiamen University, Xiamen 361005, China
  • Received:2020-10-10 Revised:2020-11-28 Accepted:2020-12-17 Online:2021-02-22 Published:2021-02-22
  • Contact: †Corresponding author. E-mail: lich@xmu.edu.cn
  • Supported by:
    Project supported by the National Key Research and Development Program of China (Grant No. 2018YFB2200103), the National Natural Science Foundation of China (Grant No. 61474094), and Principal Fund of Minnan Normal University (Grant No. KJ2020006).

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Abstract: A near-infrared germanium (Ge) Schottky photodetector (PD) with an ultrathin silicon (Si) barrier enhancement layer between the indium-doped tin oxide (ITO) electrode and Ge epilayer on Si or silicon-on-insulator (SOI) is proposed and fabricated. The well-behaved ITO/Si cap/Ge Schottky junctions without intentional doping process for the Ge epilayer are formed on the Si and SOI substrates. The Si-and SOI-based ITO/Si cap/Ge Schottky PDs exhibit low dark current densities of 33 mA/cm2 and 44 mA/cm2, respectively. Benefited from the high transmissivity of ITO electrode and the reflectivity of SOI substrate, an optical responsivity of 0.19 A/W at 1550 nm wavelength is obtained for the SOI-based ITO/Si cap/Ge Schottky PD. These complementary metal-oxide-semiconductor (CMOS) compatible Si (or SOI)-based ITO/Si cap/Ge Schottky PDs are quite useful for detecting near-infrared wavelengths with high efficiency.

Key words: silicon-based Schottky photodetector, germanium epilayer, indium-doped tin oxide

中图分类号:  (Surface double layers, Schottky barriers, and work functions)

  • 73.30.+y
81.05.Cy (Elemental semiconductors) 85.30.-z (Semiconductor devices)