Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga2O3

doi:10.1088/1674-1056/28/4/048502

中国物理B ›› 2019, Vol. 28 ›› Issue (4): 48502-048502.doi: 10.1088/1674-1056/28/4/048502

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃

Chao Yang(杨超), Hongwei Liang(梁红伟), Zhenzhong Zhang(张振中), Xiaochuan Xia(夏晓川), Heqiu Zhang(张贺秋), Rensheng Shen(申人升), Yingmin Luo(骆英民), Guotong Du(杜国同)

1 School of Microelectronics, Dalian University of Technology, Dalian 116024, China;
2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

收稿日期:2018-11-20 修回日期:2019-01-05 出版日期:2019-04-05 发布日期:2019-04-05
通讯作者: Hongwei Liang E-mail:hwliang@dlut.edu.cn
基金资助:
Project supported by National Key Research and Development Plan of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601), the National Natural Science Foundation of China (Grant Nos. 61574026, 11675198, 61774072, and 11405017), the Natural Science Foundation of Liaoning Province, China (Grant Nos. 201602453 and 201602176), China Postdoctoral Science Foundation Funded Project (Grant No. 2016M591434), and the Dalian Science and Technology Innovation Fund (Grant No. 2018J12GX060).

Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃

Chao Yang(杨超)¹, Hongwei Liang(梁红伟)¹, Zhenzhong Zhang(张振中)², Xiaochuan Xia(夏晓川)¹, Heqiu Zhang(张贺秋)¹, Rensheng Shen(申人升)¹, Yingmin Luo(骆英民)¹, Guotong Du(杜国同)¹

1 School of Microelectronics, Dalian University of Technology, Dalian 116024, China;
2 State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China

Received:2018-11-20 Revised:2019-01-05 Online:2019-04-05 Published:2019-04-05
Contact: Hongwei Liang E-mail:hwliang@dlut.edu.cn
Supported by:
Project supported by National Key Research and Development Plan of China (Grant Nos. 2016YFB0400600 and 2016YFB0400601), the National Natural Science Foundation of China (Grant Nos. 61574026, 11675198, 61774072, and 11405017), the Natural Science Foundation of Liaoning Province, China (Grant Nos. 201602453 and 201602176), China Postdoctoral Science Foundation Funded Project (Grant No. 2016M591434), and the Dalian Science and Technology Innovation Fund (Grant No. 2018J12GX060).

摘要/Abstract

摘要：

A solar-blind photodetector is fabricated on single crystal Ga₂O₃ based on vertical structure Schottky barrier diode. A Cu Schottky contact electrode is prepared in a honeycomb porous structure to increase the ultraviolet (UV) transmittance. The quantum efficiency is about 400% at 42 V. The Ga₂O₃ photodetector shows a sharp cutoff wavelength at 259 nm with high solar-blind/visible (=3213) and solar-blind/UV (=834) rejection ratio. Time-resolved photoresponse of the photodetector is investigated at 253-nm illumination from room temperature (RT) to 85.8℃. The photodetector maintains a high reversibility and response speed, even at high temperatures.

关键词: Ga₂O₃ single crystal, solar-blind, photodetector, high temperature

Abstract:

Key words: Ga₂O₃ single crystal, solar-blind, photodetector, high temperature

中图分类号: (Photodetectors (including infrared and CCD detectors))

85.60.Gz

95.85.Mt (Ultraviolet (10-300 nm)) 85.30.Kk (Junction diodes) 73.30.+y (Surface double layers, Schottky barriers, and work functions)

杨超, 梁红伟, 张振中, 夏晓川, 张贺秋, 申人升, 骆英民, 杜国同. Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃[J]. 中国物理B, 2019, 28(4): 48502-048502.

Chao Yang(杨超), Hongwei Liang(梁红伟), Zhenzhong Zhang(张振中), Xiaochuan Xia(夏晓川), Heqiu Zhang(张贺秋), Rensheng Shen(申人升), Yingmin Luo(骆英民), Guotong Du(杜国同). Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃[J]. Chin. Phys. B, 2019, 28(4): 48502-048502.

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Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃

Effect of temperature on photoresponse properties of solar-blind Schottky barrier diode photodetector based on single crystal Ga₂O₃

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