The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs
李劲, 刘红侠, 李斌, 曹磊, 袁博
The study on two-dimensional analytical model for gate stack fully depleted strained Si on silicon-germanium-on-insulator MOSFETs
Li Jin(李劲),Liu Hong-Xia(刘红侠),Li Bin(李斌),Cao Lei(曹磊), and Yuan Bo(袁博)
中国物理B . 2010, (10): 107301 -107301 .  DOI: 10.1088/1674-1056/19/10/107301