中国物理B ›› 2010, Vol. 19 ›› Issue (10): 107302-107302.doi: 10.1088/1674-1056/19/10/107302
李劲, 刘红侠, 李斌, 曹磊, 袁博
Li Jin(李劲)†, Liu Hong-Xia(刘红侠), Li Bin(李斌), Cao Lei(曹磊), and Yuan Bo(袁博)
摘要: Based on the exact resultant solution of two-dimensional Poisson's equation, the novel two-dimensional models, which include surface potential, threshold voltage, subthreshold current and subthreshold swing, have been developed for gate stack symmetrical double-gate strained-Si MOSFETs. The models are verified by numerical simulation. Besides offering the physical insight into device physics, the model provides the basic designing guidance of further immunity of short channel effect of complementary metal-oxide-semiconductor (CMOS)-based device in a nanoscale regime.
中图分类号: (Elemental semiconductors)