中国物理B ›› 2007, Vol. 16 ›› Issue (4): 1145-1149.doi: 10.1088/1009-1963/16/4/048

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Polymer thin-film transistor based on a high dielectric constant gate insulator

吕文1, 彭俊彪1, 杨开霞1, 兰林峰1, 牛巧利1, 曹镛2   

  1. (1)Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; (2)Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
  • 收稿日期:2006-08-09 修回日期:2006-08-21 出版日期:2007-04-20 发布日期:2007-04-20
  • 基金资助:
    Project support by the National ``973'' Project of China (Grant No 2002CB613405), the National Natural Science Foundation of China (Grant Nos 50573024, 50433030 and 20505020), the Key Project of Chinese Ministry of Education (Grant No 104208).

Polymer thin-film transistor based on a high dielectric constant gate insulator

Lü Wen(吕文)a), Peng Jun-Biao(彭俊彪)a)†, Yang Kai-Xia(杨开霞)a), Lan Lin-Feng(兰林峰)a), Niu Qiao-Li(牛巧利), and Cao Yong(曹镛)b)   

  1. a Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou 510640, China; b Key Laboratory of Specially Functional Materials and Advanced Manufacturing Technology, South China University of Technology, Guangzhou 510640, China
  • Received:2006-08-09 Revised:2006-08-21 Online:2007-04-20 Published:2007-04-20
  • Supported by:
    Project support by the National ``973'' Project of China (Grant No 2002CB613405), the National Natural Science Foundation of China (Grant Nos 50573024, 50433030 and 20505020), the Key Project of Chinese Ministry of Education (Grant No 104208).

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摘要： In this paper full polymer thin-film transistors (PTFTs) based on Poly (acrylonitrile) (PAN) as the gate dielectric and poly (2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV) as the semiconductor layer were investigated by using different channel width/length ratios. Relatively high dielectric constant of the polymer dielectric layer (6.27) can remarkably reduce the threshold voltage of the transistors to below -3V. Hole field-effect mobility of MEH-PPV of the PTFTs was about 4.8×10-4cm2/Vs, and on/off current ratio was larger than 102, which was comparable with that of transistors with widely used Poly (4-vinyl phenol) (PVP) or SiO2 as gate dielectrics.

Abstract: In this paper full polymer thin-film transistors (PTFTs) based on Poly (acrylonitrile) (PAN) as the gate dielectric and poly (2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV) as the semiconductor layer were investigated by using different channel width/length ratios. Relatively high dielectric constant of the polymer dielectric layer (6.27) can remarkably reduce the threshold voltage of the transistors to below -3V. Hole field-effect mobility of MEH-PPV of the PTFTs was about 4.8×10-4cm2/Vs, and on/off current ratio was larger than 102, which was comparable with that of transistors with widely used Poly (4-vinyl phenol) (PVP) or SiO2 as gate dielectrics.

Key words: Polymer, Dielectric, Field effect transistor, Field-effect mobility

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.50.Dn (Low-field transport and mobility; piezoresistance) 73.61.Ph (Polymers; organic compounds) 77.22.Ch (Permittivity (dielectric function))