A high rectification efficiency Si0.14Ge0.72Sn0.14–Ge0.82Sn0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

doi:10.1088/1674-1056/ac339e

中国物理B ›› 2022, Vol. 31 ›› Issue (6): 68401-068401.doi: 10.1088/1674-1056/ac339e

A high rectification efficiency Si_0.14Ge_0.72Sn_0.14–Ge_0.82Sn_0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

Dong Zhang(张栋)¹, Jianjun Song(宋建军)^1,2,†, Xiaohuan Xue(薛笑欢)¹, and Shiqi Zhang(张士琦)¹

1 School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Radiation Resistant Integrated Circuit Technology Laboratory of China Aerospace Science and Technology Group Corporation, Xi'an 710071, China

收稿日期:2021-09-09 修回日期:2021-10-19 接受日期:2021-10-27 出版日期:2022-05-17 发布日期:2022-05-19
通讯作者: Jianjun Song E-mail:jianjun_79_81@xidian.edu.cn
基金资助:
Project supported by the National 111 Center (Grant No. B12026) and Research on *** Technology of Intelligent Reconfigurable General System (Grant No. F020250058).

A high rectification efficiency Si_0.14Ge_0.72Sn_0.14–Ge_0.82Sn_0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

Dong Zhang(张栋)¹, Jianjun Song(宋建军)^1,2,†, Xiaohuan Xue(薛笑欢)¹, and Shiqi Zhang(张士琦)¹

1 School of Microelectronics, Xidian University, Xi'an 710071, China;
2 Radiation Resistant Integrated Circuit Technology Laboratory of China Aerospace Science and Technology Group Corporation, Xi'an 710071, China

Received:2021-09-09 Revised:2021-10-19 Accepted:2021-10-27 Online:2022-05-17 Published:2022-05-19
Contact: Jianjun Song E-mail:jianjun_79_81@xidian.edu.cn
Supported by:
Project supported by the National 111 Center (Grant No. B12026) and Research on *** Technology of Intelligent Reconfigurable General System (Grant No. F020250058).

摘要/Abstract

摘要： The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET) with a Si_0.14Ge_0.72Sn_0.14-Ge_0.82Sn_0.18-Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported. The quantum structure combined with δ-doping technology is used to reduce the scattering of the device and improve its electron mobility; at the same time, the generation of surface channels is suppressed by the Si_0.14Ge_0.72Sn_0.14 cap layer. By adjusting the threshold voltage of the device to 91 mV, setting the device aspect ratio to 1 μm/0.4 μm and adopting a novel diode connection method, the rectification efficiency of the device is improved. With simulation by Silvaco TCAD software, good performance is displayed in the transfer and output characteristics. For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ , the rectification efficiency of the device can reach 7.14% at an input power of -10 dBm, which is 4.2 times that of a Si MOSFET (with a threshold voltage of 80 mV) under the same conditions; this device shows a better rectification effect than a Si MOSFET in the range of -30 dBm to 6.9 dBm.

关键词: microwave wireless energy transmission, quantum structure, GeSn, MOS rectification

Abstract: The design strategy and efficiency optimization of a Ge-based n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET) with a Si_0.14Ge_0.72Sn_0.14-Ge_0.82Sn_0.18-Ge quantum structure used for 2.45 GHz weak energy microwave wireless energy transmission is reported. The quantum structure combined with δ-doping technology is used to reduce the scattering of the device and improve its electron mobility; at the same time, the generation of surface channels is suppressed by the Si_0.14Ge_0.72Sn_0.14 cap layer. By adjusting the threshold voltage of the device to 91 mV, setting the device aspect ratio to 1 μm/0.4 μm and adopting a novel diode connection method, the rectification efficiency of the device is improved. With simulation by Silvaco TCAD software, good performance is displayed in the transfer and output characteristics. For a simple half-wave rectifier circuit with a load of 1 pf and 20 kΩ , the rectification efficiency of the device can reach 7.14% at an input power of -10 dBm, which is 4.2 times that of a Si MOSFET (with a threshold voltage of 80 mV) under the same conditions; this device shows a better rectification effect than a Si MOSFET in the range of -30 dBm to 6.9 dBm.

Key words: microwave wireless energy transmission, quantum structure, GeSn, MOS rectification

中图分类号: (Microwave circuits)

84.40.Dc

84.60.Bk (Performance characteristics of energy conversion systems; figure of merit) 73.21.-b (Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems) 85.30.Tv (Field effect devices)

Dong Zhang(张栋), Jianjun Song(宋建军), Xiaohuan Xue(薛笑欢), and Shiqi Zhang(张士琦). A high rectification efficiency Si_0.14Ge_0.72Sn_0.14–Ge_0.82Sn_0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission[J]. 中国物理B, 2022, 31(6): 68401-068401.

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A high rectification efficiency Si_0.14Ge_0.72Sn_0.14–Ge_0.82Sn_0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

A high rectification efficiency Si_0.14Ge_0.72Sn_0.14–Ge_0.82Sn_0.18–Ge quantum structure n-MOSFET for 2.45 GHz weak energy microwave wireless energy transmission

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