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High power and high reliability GaN/InGaN flip-chip light-emitting diodes
张剑铭, 邹德恕, 徐晨, 朱彦旭, 梁庭, 达小丽, 沈光地
2007 (4):
1135-1139.
doi: 10.1088/1009-1963/16/4/046
摘要
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High-power and high-reliability GaN/InGaN flip-chip light-emitting
diodes (FCLEDs) have been demonstrated by employing a flip-chip
design, and its fabrication process is developed. FCLED is composed
of a LED die and a submount which is integrated with circuits to
protect the LED from electrostatic discharge (ESD) damage. The LED
die is flip-chip soldered to the submount, and light is extracted
through the transparent sapphire substrate instead of an absorbing
Ni/Au contact layer as in conventional GaN/InGaN LED epitaxial
designs. The optical and electrical characteristics of the FCLED are
presented. According to ESD IEC61000-4-2 standard (human body
model), the FCLEDs tolerated at least 10\,kV ESD shock have ten
times more capacity than conventional GaN/InGaN LEDs. It is shown
that the light output from the FCLEDs at forward current 350mA with
a forward voltage of 3.3\,V is 144.68\,mW, and 236.59\,mW at 1.0\,A
of forward current. With employing an optimized contact scheme the
FCLEDs can easily operate up to 1.0\,A without significant power
degradation or failure. The life test of FCLEDs is performed at
forward current of 200\,mA at room temperature. The degradation of
the light output power is no more than 9\% after 1010.75\,h of life
test, indicating the excellent reliability. FCLEDs can be used in
practice where high power and high reliability are necessary, and
allow designs with a reduced number of LEDs.
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