中国物理B ›› 2007, Vol. 16 ›› Issue (4): 1140-1144.doi: 10.1088/1009-1963/16/4/047

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs

曹艳荣, 马晓华, 郝跃, 张月, 于磊, 朱志炜, 陈海峰   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • 收稿日期:2006-08-13 修回日期:2006-10-20 出版日期:2007-04-20 发布日期:2007-04-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No~60376024) and the National High Technology Research and Development Program of China (Grant No~2003AA1Z1630).

Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs

Cao Yan-Rong(曹艳荣)†, Ma Xiao-Hua(马晓华), Hao Yue(郝跃), Zhang Yue(张月), Yu Lei(于磊), Zhu Zhi-Wei(朱志炜), and Chen Hai-Feng(陈海峰)   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China
  • Received:2006-08-13 Revised:2006-10-20 Online:2007-04-20 Published:2007-04-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No~60376024) and the National High Technology Research and Development Program of China (Grant No~2003AA1Z1630).

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摘要： Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account, conventional direct current (DC) stress study on negative bias temperature instability (NBTI) neglects the detrapping of oxide positive charges and the recovery of interface states under the `low' state of p-channel metal oxide semiconductor field effect transistors (MOSFETs) inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.

Abstract: Taking the actual operating condition of complementary metal oxide semiconductor (CMOS) circuit into account, conventional direct current (DC) stress study on negative bias temperature instability (NBTI) neglects the detrapping of oxide positive charges and the recovery of interface states under the `low' state of p-channel metal oxide semiconductor field effect transistors (MOSFETs) inverter operation. In this paper we have studied the degradation and recovery of NBTI under alternating stress, and presented a possible recovery mechanism. The three stages of recovery mechanism under positive bias are fast recovery, slow recovery and recovery saturation.

Key words: NBTI, recovery, interface states, oxide positive charges

中图分类号:  (Field effect devices)

  • 85.30.Tv
85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology)