中国物理B ›› 2007, Vol. 16 ›› Issue (4): 1150-1154.doi: 10.1088/1009-1963/16/4/049

• • 上一篇    下一篇

Pressure effects in AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors

王建, 张文栋, 薛晨阳, 熊继军, 刘俊, 谢斌   

  1. National Key Laboratory For Electronic Measurement Technology, North University of China, Taiyuan 030051, China
  • 收稿日期:2006-08-24 修回日期:2006-10-25 出版日期:2007-04-20 发布日期:2007-04-20
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos 50405025 and 50375050).

Pressure effects in AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes for application in micromachined sensors

Wang Jian(王建)†, Zhang Wen-Dong(张文栋), Xue Chen-Yang(薛晨阳), Xiong Ji-Jun(熊继军), Liu Jun(刘俊), and Xie Bin(谢斌)   

  1. National Key Laboratory For Electronic Measurement Technology, North University of China, Taiyuan 030051, China
  • Received:2006-08-24 Revised:2006-10-25 Online:2007-04-20 Published:2007-04-20
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos 50405025 and 50375050).

PDF (PC)

709

赞

摘要： This paper reports the current--voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes (RTDs) as a function of uniaxial external stress applied parallel to the [110] and the [1\bar{1}0] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [1\bar{1}0] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [1\bar{1}0] stresses and the linear sensitivities are up to 0.69mV/MPa, -0.69mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37mV/kPa.

关键词: pressure effects, RTDs, micromachined sensors

Abstract: This paper reports the current--voltage characteristics of [001]-oriented AlAs/InxGa1-xAs/GaAs resonant tunnelling diodes (RTDs) as a function of uniaxial external stress applied parallel to the [110] and the [1$\bar{1}$0] orientations, and the output characteristics of the GaAs pressure sensor based on the pressure effect on the RTDs. Under [110] stress, the resonance peak voltages of the RTDs shift to more positive voltages. For [1$\bar{1}$0] stress, the peaks shift toward more negative voltages. The resonance peak voltage is linearly dependent on the [110] and [1$\bar{1}$0] stresses and the linear sensitivities are up to 0.69mV/MPa, -0.69mV/MPa respectively. For the pressure sensor, the linear sensitivity is up to 0.37mV/kPa.

Key words: pressure effects, RTDs, micromachined sensors

中图分类号:  (Junction breakdown and tunneling devices (including resonance tunneling devices))

  • 85.30.Mn
85.30.Kk (Junction diodes) 85.85.+j (Micro- and nano-electromechanical systems (MEMS/NEMS) and devices) 07.07.Df (Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing) 47.80.Fg (Pressure and temperature measurements)