中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1335-1338.doi: 10.1088/1009-1963/15/6/034

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

张杨, 曾一平, 马龙, 王宝强, 朱占平, 王良臣, 杨富华   

  1. Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 收稿日期:2006-01-19 修回日期:2006-02-08 出版日期:2006-06-20 发布日期:2006-06-20

Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature

Zhang Yang (张杨), Zeng Yi-Ping (曾一平), Ma Long (马龙), Wang Bao-Qiang (王宝强), Zhu Zhan-Ping (朱占平), Wang Liang-Chen (王良臣), Yang Fu-Hua (杨富华)   

  1. Materials Science Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • Received:2006-01-19 Revised:2006-02-08 Online:2006-06-20 Published:2006-06-20

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摘要： This paper reports that InAs/In$_{0.53}$Ga$_{0.47}$As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm$^{2}$ has been obtained for diodes with AlAs barriers of ten monolayers, and an In$_{0.53}$Ga$_{0.47}$As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

Abstract: This paper reports that InAs/In$_{0.53}$Ga$_{0.47}$As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm$^{2}$ has been obtained for diodes with AlAs barriers of ten monolayers, and an In$_{0.53}$Ga$_{0.47}$As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.

Key words: resonant tunnelling diode, InP substrate, molecular beam epitaxy, high resolution transmission electron microscope

中图分类号:  (Tunneling)

  • 73.40.Gk
68.37.Lp (Transmission electron microscopy (TEM)) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.61.Ey (III-V semiconductors) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 85.30.Mn (Junction breakdown and tunneling devices (including resonance tunneling devices)) 85.35.-p (Nanoelectronic devices)