Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface

doi:10.1088/1674-1056/ac7a0f

中国物理B ›› 2022, Vol. 31 ›› Issue (11): 117201-117201.doi: 10.1088/1674-1056/ac7a0f

Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface

Liang-Zhong Lin(林亮中)¹, Yi-Yun Ling(凌艺纭)², Dong Zhang(张东)³, and Zhen-Hua Wu(吴振华)^4,†

1 School of Information Engineering, Zhongshan Polytechnic, Zhongshan 528400, China;
2 School of Physics and Material Sciences, Guangzhou University, Guangzhou 510000, China;
3 SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 MEDIT, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

收稿日期:2022-02-10 修回日期:2022-06-09 接受日期:2022-06-18 出版日期:2022-10-17 发布日期:2022-10-17
通讯作者: Zhen-Hua Wu E-mail:wuzhenhua@ime.ac.cn
基金资助:
Project supported by the College Innovation Project of Guangdong Province (Grant No. 2020KTSCX329), the Social Public Welfare and Basic Research Project of Zhongshan City (Grant No. 2020B2044), Zhongshan Polytechnic Highlevel Talents Project (Grant No. KYG2102), the National Key R&D Program of China (Grant No. 2021YFA1200502), and the National Natural Science Foundation of China (Grant No. 12174423).

Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface

Liang-Zhong Lin(林亮中)¹, Yi-Yun Ling(凌艺纭)², Dong Zhang(张东)³, and Zhen-Hua Wu(吴振华)^4,†

1 School of Information Engineering, Zhongshan Polytechnic, Zhongshan 528400, China;
2 School of Physics and Material Sciences, Guangzhou University, Guangzhou 510000, China;
3 SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
4 MEDIT, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China

Received:2022-02-10 Revised:2022-06-09 Accepted:2022-06-18 Online:2022-10-17 Published:2022-10-17
Contact: Zhen-Hua Wu E-mail:wuzhenhua@ime.ac.cn
Supported by:
Project supported by the College Innovation Project of Guangdong Province (Grant No. 2020KTSCX329), the Social Public Welfare and Basic Research Project of Zhongshan City (Grant No. 2020B2044), Zhongshan Polytechnic Highlevel Talents Project (Grant No. KYG2102), the National Key R&D Program of China (Grant No. 2021YFA1200502), and the National Natural Science Foundation of China (Grant No. 12174423).

摘要/Abstract

摘要： We investigate theoretically the carrier transport in a two-dimensional topological insulator of (001) HgTe/CdTe quantum-well heterostructure with inverted band, and find distinct switchable features of the transmission spectra in the topological edge states by designing the double-electric modulation potentials. The transmission spectra exhibit the significant Fabry-Pérot resonances for the double-electric transport system. Furthermore, the transmission properties show rich behaviors when the Fermi energy lies in the different locations in the energy spectrum and the double-electric barrier regions. The opacity and transparency of the double-modulated barrier regions can be controlled by tuning the modulated potentials, Fermi energy and the length of modulated regions. This electrical switching behavior can be realized by tuning the voltages applied on the metal gates. The Fabry-Pérot resonances leads to oscillations in the transmission which can be observed in experimentally. This electric modulated-mechanism provides us a realistic way to switch the transmission in edge states which can be constructed in low-power information processing devices.

关键词: HgTe/CdTe quantum well, double-electric modulations, transmission spectra, Fabry-Pérot resonances

Abstract: We investigate theoretically the carrier transport in a two-dimensional topological insulator of (001) HgTe/CdTe quantum-well heterostructure with inverted band, and find distinct switchable features of the transmission spectra in the topological edge states by designing the double-electric modulation potentials. The transmission spectra exhibit the significant Fabry-Pérot resonances for the double-electric transport system. Furthermore, the transmission properties show rich behaviors when the Fermi energy lies in the different locations in the energy spectrum and the double-electric barrier regions. The opacity and transparency of the double-modulated barrier regions can be controlled by tuning the modulated potentials, Fermi energy and the length of modulated regions. This electrical switching behavior can be realized by tuning the voltages applied on the metal gates. The Fabry-Pérot resonances leads to oscillations in the transmission which can be observed in experimentally. This electric modulated-mechanism provides us a realistic way to switch the transmission in edge states which can be constructed in low-power information processing devices.

Key words: HgTe/CdTe quantum well, double-electric modulations, transmission spectra, Fabry-Pérot resonances

中图分类号: (Theory of electronic transport; scattering mechanisms)

72.10.-d

73.40.-c (Electronic transport in interface structures) 73.40.Gk (Tunneling) 73.63.Hs (Quantum wells)

Liang-Zhong Lin(林亮中), Yi-Yun Ling(凌艺纭), Dong Zhang(张东), and Zhen-Hua Wu(吴振华). Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface[J]. 中国物理B, 2022, 31(11): 117201-117201.

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Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface

Electron tunneling through double-electric barriers on HgTe/CdTe heterostructure interface

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