中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1335-1338.doi: 10.1088/1009-1963/15/6/034
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
张杨, 曾一平, 马龙, 王宝强, 朱占平, 王良臣, 杨富华
Zhang Yang (张杨), Zeng Yi-Ping (曾一平), Ma Long (马龙), Wang Bao-Qiang (王宝强), Zhu Zhan-Ping (朱占平), Wang Liang-Chen (王良臣), Yang Fu-Hua (杨富华)
摘要: This paper reports that InAs/In$_{0.53}$Ga$_{0.47}$As/AlAs resonant tunnelling diodes have been grown on InP substrates by molecular beam epitaxy. Peak to valley current ratio of these devices is 17 at 300K. A peak current density of 3kA/cm$^{2}$ has been obtained for diodes with AlAs barriers of ten monolayers, and an In$_{0.53}$Ga$_{0.47}$As well of eight monolayers with four monolayers of InAs insert layer. The effects of growth interruption for smoothing potential barrier interfaces have been investigated by high resolution transmission electron microscope.
中图分类号: (Tunneling)