Nano LaAlO3 buffer layer-assisted tunneling current in manganite p-n heterojunction

doi:10.1088/1674-1056/24/10/107102

中国物理B ›› 2015, Vol. 24 ›› Issue (10): 107102-107102.doi: 10.1088/1674-1056/24/10/107102

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Nano LaAlO₃ buffer layer-assisted tunneling current in manganite p-n heterojunction

马俊杰^a, 王登京^{a b}, 黄海林^a, 汪汝武^b, 李云宝^a

a Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China;
b Hubei Provincial Key Laboratory of System Science in Metallurgical Process, Wuhan 430065, China

收稿日期:2015-04-23 修回日期:2015-05-18 出版日期:2015-10-05 发布日期:2015-10-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

Nano LaAlO₃ buffer layer-assisted tunneling current in manganite p-n heterojunction

Ma Jun-Jie (马俊杰)^a, Wang Deng-Jing (王登京)^{a b}, Huang Hai-Lin (黄海林)^a, Wang Ru-Wu (汪汝武)^b, Li Yun-Bao (李云宝)^a

a Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China;
b Hubei Provincial Key Laboratory of System Science in Metallurgical Process, Wuhan 430065, China

Received:2015-04-23 Revised:2015-05-18 Online:2015-10-05 Published:2015-10-05
Contact: Wang Deng-Jing E-mail:d.j.wang@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

摘要/Abstract

摘要： An oxide p-n heterojunction composed of a 150-nm La_0.67Ca_0.33MnO₃ (LCMO) film, 0.05 wt% Nb doped SrTiO₃ substrate (STON), and sandwiched 5-nm LaAlO₃ (LAO) thin film is fabricated with the pulsed laser deposition technique and the interfacial transport properties are experimentally studied. The rectifying behavior of the junction is in agreement with Newman's equation, indicating that tunneling is the dominant process for the carriers to pass through the interface while thermal emission is the dominant transport model of an LCMO/STON heterojunction with no LAO buffer layer.

关键词: manganite, heterojunction, tunneling

Abstract: An oxide p-n heterojunction composed of a 150-nm La_0.67Ca_0.33MnO₃ (LCMO) film, 0.05 wt% Nb doped SrTiO₃ substrate (STON), and sandwiched 5-nm LaAlO₃ (LAO) thin film is fabricated with the pulsed laser deposition technique and the interfacial transport properties are experimentally studied. The rectifying behavior of the junction is in agreement with Newman's equation, indicating that tunneling is the dominant process for the carriers to pass through the interface while thermal emission is the dominant transport model of an LCMO/STON heterojunction with no LAO buffer layer.

Key words: manganite, heterojunction, tunneling

中图分类号: (Conductivity phenomena in semiconductors and insulators)

72.20.-i

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.40.Gk (Tunneling)

马俊杰, 王登京, 黄海林, 汪汝武, 李云宝. Nano LaAlO₃ buffer layer-assisted tunneling current in manganite p-n heterojunction[J]. 中国物理B, 2015, 24(10): 107102-107102.

Ma Jun-Jie (马俊杰), Wang Deng-Jing (王登京), Huang Hai-Lin (黄海林), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝). Nano LaAlO₃ buffer layer-assisted tunneling current in manganite p-n heterojunction[J]. Chin. Phys. B, 2015, 24(10): 107102-107102.

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Nano LaAlO₃ buffer layer-assisted tunneling current in manganite p-n heterojunction

Nano LaAlO₃ buffer layer-assisted tunneling current in manganite p-n heterojunction

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