Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
张杨, 曾一平, 马龙, 王宝强, 朱占平, 王良臣, 杨富华
Nanoelectronic devices---resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature
Zhang Yang (张杨), Zeng Yi-Ping (曾一平), Ma Long (马龙), Wang Bao-Qiang (王宝强), Zhu Zhan-Ping (朱占平), Wang Liang-Chen (王良臣), Yang Fu-Hua (杨富华)
中国物理B
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2006, (6): 1335
-1338
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DOI: 10.1088/1009-1963/15/6/034