中国物理B ›› 2006, Vol. 15 ›› Issue (6): 1330-1334.doi: 10.1088/1009-1963/15/6/033

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The influence of SiNx substrate on crystallinity of μc-Si film used in thin film transistors

李娟1, 吴春亚1, 刘建平1, 赵淑芸1, 孟志国1, 熊绍珍1, 张丽珠2   

  1. (1)State Key Laboratory of Transducer Technology, Shanghai Institute of Technical Physics,Chinese Academy of Sciences, Shanghai 200083, China,Institute of Photo-electronics, Nankai University, Tianjin 300071, China;The Tianjin Key Laboratory of Photo-electr; (2)Tianjin Engineering Teachers College, Tianjin 300222,China
  • 收稿日期:2005-09-29 修回日期:2006-01-24 出版日期:2006-06-20 发布日期:2006-06-20
  • 基金资助:
    Project supported by the `863' Project of National Ministry of Science and Technology (Grant No 2004AA33570), Key Project of\linebreak \makebox[1.6mm]{}NSFC (Grant No 60437030) and Tianjin Natural Science Foundation (Grant No 05YFJMJC01400).

The influence of SiNx substrate on crystallinity of μc-Si film used in thin film transistors

Li Juan (李娟)a, Wu Chun-Ya (吴春亚)a, Liu Jian-Ping (刘建平)a, Zhao Shu-Yun (赵淑芸)a, Meng Zhi-Guo (孟志国)a, Xiong Shao-Zhen (熊绍珍)a, Zhang Li-Zhu (张丽珠)b   

  1. a Institute of Photo-electronics, Nankai University, Tianjin 300071, China and The Tianjin Key Laboratory of Photo-electronic Thin Film Devices and Technology, Nankai University, Key Laboratory of Opto-electronic Information Science and Technology (Nankai University and Tianjin University), Ministry of Education, Tianjin 300071, China; b Tianjin Engineering Teachers College, Tianjin 300222, China
  • Received:2005-09-29 Revised:2006-01-24 Online:2006-06-20 Published:2006-06-20
  • Supported by:
    Project supported by the `863' Project of National Ministry of Science and Technology (Grant No 2004AA33570), Key Project of\linebreak \makebox[1.6mm]{}NSFC (Grant No 60437030) and Tianjin Natural Science Foundation (Grant No 05YFJMJC01400).

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摘要： This paper found that the crystalline volume ratio ($X_{\rm c}$) of $\mu$c-Si deposited on SiN$_x$ substrate is higher than that on 7059 glass. At the same silane concentration (SC) (for example, at SC=2{\%}), the $X_{\rm c}$ of $\mu$c-Si deposited on SiN$_x$ is more than 64{\%}, but just 44{\%} if deposited on Conning 7059. It considered that the `hills' on SiN$_x$ substrate would promote the crystalline growth of $\mu$c-Si thin film, which has been confirmed by atomic force microscope (AFM) observation. Comparing several thin film transistor (TFT) samples whose active-layer were deposited under various SC, this paper found that the appropriate SC for the $\mu$c-Si thin film used in TFT as active layer should be more than 2{\%}, and $X_{\rm c}$ should be around 50\%. Additionally, the stability comparison of $\mu$c-Si TFT and a-Si TFT is shown in this paper.

关键词: $\mu$c-Si:H thin film, SiN$_x$ substrate, crystallinity, bottom-gate TFT

Abstract: This paper found that the crystalline volume ratio (Xc) of $\mu$c-Si deposited on SiNx substrate is higher than that on 7059 glass. At the same silane concentration (SC) (for example, at SC=2%), the Xc of $\mu$c-Si deposited on SiNx is more than 64%, but just 44% if deposited on Conning 7059. It considered that the `hills' on SiNx substrate would promote the crystalline growth of $\mu$c-Si thin film, which has been confirmed by atomic force microscope (AFM) observation. Comparing several thin film transistor (TFT) samples whose active-layer were deposited under various SC, this paper found that the appropriate SC for the $\mu$c-Si thin film used in TFT as active layer should be more than 2%, and Xc should be around 50%. Additionally, the stability comparison of $\mu$c-Si TFT and a-Si TFT is shown in this paper.

Key words: $\mu$c-Si:H thin film, SiNx substrate, crystallinity, bottom-gate TFT

中图分类号:  (Composition and phase identification)

  • 68.55.Nq
68.37.Ps (Atomic force microscopy (AFM)) 68.55.-a (Thin film structure and morphology) 73.61.Cw (Elemental semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)) 85.30.Tv (Field effect devices)