Effect of charge order transition on tunneling resistance in Pr0.6Ca0.4MnO3/Nb-doped SrTiO3 heterojunction

doi:10.1088/1674-1056/23/5/057202

中国物理B ›› 2014, Vol. 23 ›› Issue (5): 57202-057202.doi: 10.1088/1674-1056/23/5/057202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

Effect of charge order transition on tunneling resistance in Pr_0.6Ca_0.4MnO₃/Nb-doped SrTiO₃ heterojunction

王登京, 马俊杰, 王妹, 汪汝武, 李云宝

Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China

收稿日期:2013-10-17 修回日期:2013-11-29 出版日期:2014-05-15 发布日期:2014-05-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

Effect of charge order transition on tunneling resistance in Pr_0.6Ca_0.4MnO₃/Nb-doped SrTiO₃ heterojunction

Wang Deng-Jing (王登京), Ma Jun-Jie (马俊杰), Wang Mei (王妹), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝)

Department of Applied Physics, Wuhan University of Science and Technology, Wuhan 430081, China

Received:2013-10-17 Revised:2013-11-29 Online:2014-05-15 Published:2014-05-15
Contact: Wang Deng-Jing E-mail:d.j.wang@163.com
About author:72.20.-i; 73.40.Lq; 73.40.Gk; 73.40.Ei
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 10804089).

摘要/Abstract

摘要： An oxide p-n heterojunction composed of Pr_0.6Ca_0.4MnO₃ film, with a charge order (CO) transition, and 1wt% Nb-doped SrTiO₃ substrate is fabricated, and the transport properties of the interface are experimentally studied. The rectifying behavior of the junction, well described by the Newman equation, is observed, indicating that tunneling is the dominant process by which the carriers pass through the interface. Above and below the CO transition temperature, satisfactory linear dependencies of junction resistance on temperature are observed, but the slopes of the two resistance-temperature relations are different. The CO process is believed to be relevant to this difference.

关键词: manganite, heterojunction, tunneling, charge order transition

Abstract: An oxide p-n heterojunction composed of Pr_0.6Ca_0.4MnO₃ film, with a charge order (CO) transition, and 1wt% Nb-doped SrTiO₃ substrate is fabricated, and the transport properties of the interface are experimentally studied. The rectifying behavior of the junction, well described by the Newman equation, is observed, indicating that tunneling is the dominant process by which the carriers pass through the interface. Above and below the CO transition temperature, satisfactory linear dependencies of junction resistance on temperature are observed, but the slopes of the two resistance-temperature relations are different. The CO process is believed to be relevant to this difference.

Key words: manganite, heterojunction, tunneling, charge order transition

中图分类号: (Conductivity phenomena in semiconductors and insulators)

72.20.-i

73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.40.Gk (Tunneling) 73.40.Ei (Rectification)

王登京, 马俊杰, 王妹, 汪汝武, 李云宝. Effect of charge order transition on tunneling resistance in Pr_0.6Ca_0.4MnO₃/Nb-doped SrTiO₃ heterojunction[J]. 中国物理B, 2014, 23(5): 57202-057202.

Wang Deng-Jing (王登京), Ma Jun-Jie (马俊杰), Wang Mei (王妹), Wang Ru-Wu (汪汝武), Li Yun-Bao (李云宝). Effect of charge order transition on tunneling resistance in Pr_0.6Ca_0.4MnO₃/Nb-doped SrTiO₃ heterojunction[J]. Chin. Phys. B, 2014, 23(5): 57202-057202.

参考文献 20

[1]	Sugiura M, Uragou K, Noda M, Tachiki M and Kobayashi T 1999 Jpn. J. Appl. Phys., Part 1 38 2675
[2]	Liu Y K, Yin Y W and Li X G 2013 Chin. Phys. B 22 087502
[3]	Nakagawa N, Asai M, Mukunoki Y, Susaki T and Hwang H Y 2005 Appl. Phys. Lett. 86 082504
[4]	Sun J R, Shen B G, Sheng Z G and Sun Y P 2004 Appl. Phys. Lett. 85 3375
[5]	Wang J Y, Zhai W, Jin K X and Chen C L 2013 Chin. Phys. Lett. 30 060701
[6]	Wang D J, Sun J R, Xie Y W, Li Y B, Zhang L G, Wang R W and Shen B G 2010 Appl. Phys. Lett. 97 192503
[7]	Wang D J, Sun J R, Lü W M, Xie Y W, Liang S and Shen B G 2007 J. Phys. D: Appl. Phys. 40 5075
[8]	Wang D J, Sun J R, Xie Y W, Lü W M, Liang S, Zhao T Y and Shen B G 2007 Appl. Phys. Lett. 91 062503
[9]	Liang S, Sun J R, Wang J and Shen B G 2009 Appl. Phys. Lett. 95 182509
[10]	Xie Y W, Sun J R, Wang D J, Liang S, Lü W M and Shen B G 2007 Appl. Phys. Lett. 90 192903
[11]	Okimoto Y, Tomioka Y, Onose Y, Otsuka Y and Tokura Y 1998 Phys. Rev. B 57 R9377
[12]	Zhang Y Q, Meng H, Wang X W, Liu J J, Du J and Zhang Z D 2011 Appl. Phys. Lett. 99 252502
[13]	Cui C W and Tyson T A 2004 Phys. Rev. B 70 094409
[14]	Wang D J, Xie Y W, Xiong C M, Shen B G and Sun J R 2006 Europhys. Lett. 73 401
[15]	Sharma B L and Purohit R K 1974 Semiconductor Heterojunctions (Oxford: Oxford Press) pp. 1-13
[16]	Newman P C 1965 Electron. Lett. 1 265
[17]	Sze S M 1998 Physics of Semiconductor Devices (2nd edn.) (New York: Wiley)
[18]	Mitsui T and Westphal W B 1961 Phys. Rev. 124 1354
[19]	Biskup N, de Andr'es A, Martinez J L and Perca C 2005 Phys. Rev. B 72 024115
[20]	Saucke G, Norpoth J, Jooss C, Su D and Zhu Y M 2012 Phys. Rev. B 85 165315

Effect of charge order transition on tunneling resistance in Pr_0.6Ca_0.4MnO₃/Nb-doped SrTiO₃ heterojunction

Effect of charge order transition on tunneling resistance in Pr_0.6Ca_0.4MnO₃/Nb-doped SrTiO₃ heterojunction

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 20

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Wangwei Xu(许望伟), Shijie Sun(孙诗杰), Muzi Yang(杨慕紫), Zhenliang Hao(郝振亮), Lei Gao(高蕾), Jianchen Lu(卢建臣), Jiasen Zhu(朱嘉森), Jian Chen(陈建), and Jinming Cai(蔡金明). Polarization Raman spectra of graphene nanoribbons[J]. 中国物理B, 2023, 32(4): 46803-046803.
[2]	Meixia Cheng(程梅霞), Suzhen Luan(栾苏珍), Hailin Wang(王海林), and Renxu Jia(贾仁需). Design and research of normally-off β-Ga₂O₃/4H-SiC heterojunction field effect transistor[J]. 中国物理B, 2023, 32(3): 37302-037302.
[3]	Zhi-Wei Hu(胡志伟) and Xiang-Gang Qiu(邱祥冈). Abnormal magnetoresistance effect in the Nb/Si superconductor-semiconductor heterojunction[J]. 中国物理B, 2023, 32(3): 37401-037401.
[4]	Xin Jiang(蒋鑫), Chen-Hao Li(李晨浩), Shuo-Xiong Yang(羊硕雄), Jia-Hao Liang(梁家豪), Long-Kun Lai(来龙坤), Qing-Yang Dong(董青杨), Wei Huang(黄威),Xin-Yu Liu(刘新宇), and Wei-Jun Luo(罗卫军). Reverse gate leakage mechanism of AlGaN/GaN HEMTs with Au-free gate[J]. 中国物理B, 2023, 32(3): 37201-037201.
[5]	Caixia Zhang(张彩霞), Yaling Li(李雅玲), Beibei Lin(林蓓蓓), Jianlong Tang(唐建龙), Quanzhen Sun(孙全震), Weihao Xie(谢暐昊), Hui Deng(邓辉), Qiao Zheng(郑巧), and Shuying Cheng(程树英). Micro-mechanism study of the effect of Cd-free buffer layers ZnXO (X=Mg/Sn) on the performance of flexible Cu₂ZnSn(S, Se)⁴ solar cell[J]. 中国物理B, 2023, 32(2): 28801-028801.
[6]	Jia Chen(陈佳), Peiyue Yu(于沛玥), Lei Zhao(赵磊), Yanru Li(李彦如), Meiyin Yang(杨美音), Jing Xu(许静), Jianfeng Gao(高建峰), Weibing Liu(刘卫兵), Junfeng Li(李俊峰), Wenwu Wang(王文武), Jin Kang(康劲), Weihai Bu(卜伟海), Kai Zheng(郑凯), Bingjun Yang(杨秉君), Lei Yue(岳磊), Chao Zuo(左超), Yan Cui(崔岩), and Jun Luo(罗军). Charge-mediated voltage modulation of magnetism in Hf_0.5Zr_0.5O₂/Co multiferroic heterojunction[J]. 中国物理B, 2023, 32(2): 27504-027504.
[7]	Zeng Liu(刘增), Ling Du(都灵), Shao-Hui Zhang(张少辉), Ang Bian(边昂), Jun-Peng Fang(方君鹏), Chen-Yang Xing(邢晨阳), Shan Li(李山), Jin-Cheng Tang(汤谨诚), Yu-Feng Guo(郭宇锋), and Wei-Hua Tang(唐为华). Achieving highly-efficient H₂S gas sensor by flower-like SnO₂-SnO/porous GaN heterojunction[J]. 中国物理B, 2023, 32(2): 20701-020701.
[8]	Wen Xiong(熊文), Jing-Yong Huo(霍景永), Xiao-Han Wu(吴小晗), Wen-Jun Liu(刘文军),David Wei Zhang(张卫), and Shi-Jin Ding(丁士进). High-performance amorphous In-Ga-Zn-O thin-film transistor nonvolatile memory with a novel p-SnO/n-SnO₂ heterojunction charge trapping stack[J]. 中国物理B, 2023, 32(1): 18503-018503.
[9]	Yi-Han Cheng(程奕涵), Yu-Cheng Zhu(朱禹丞), Xin-Zheng Li(李新征), and Wei Fang(方为). Concerted versus stepwise mechanisms of cyclic proton transfer: Experiments, simulations, and current challenges[J]. 中国物理B, 2023, 32(1): 18201-018201.
[10]	Jiu-Huan Chen(陈九环) and Xin-Lu Cheng(程新路). Polyhedral silver clusters as single molecule ammonia sensor based on charge transfer-induced plasmon enhancement[J]. 中国物理B, 2023, 32(1): 17302-017302.
[11]	Wenyu Huang(黄文宇), Cangmin Wang(王藏敏), Yichao Liu(刘艺超), Shaoting Wang(王绍庭), Weifeng Ge(葛威锋), Huaili Qiu(仇怀利), Yuanjun Yang(杨远俊), Ting Zhang(张霆), Hui Zhang(张汇), and Chen Gao(高琛). Strain-mediated magnetoelectric control of tunneling magnetoresistance in magnetic tunneling junction/ferroelectric hybrid structures[J]. 中国物理B, 2022, 31(9): 97502-097502.
[12]	Yi-Jie Wang(王一杰) and Jian-Hua Wei(魏建华). Dynamic transport characteristics of side-coupled double-quantum-impurity systems[J]. 中国物理B, 2022, 31(9): 97305-097305.
[13]	Jing Wang(王静), Meysam Bagheri Tagani, Li Zhang(张力), Yu Xia(夏雨), Qilong Wu(吴奇龙), Bo Li(黎博), Qiwei Tian(田麒玮), Yuan Tian(田园), Long-Jing Yin(殷隆晶), Lijie Zhang(张利杰), and Zhihui Qin(秦志辉). Selective formation of ultrathin PbSe on Ag(111)[J]. 中国物理B, 2022, 31(9): 96801-096801.
[14]	Xiufang Yang(杨秀芳), Shengsheng Zhao(赵生盛), Qian Huang(黄茜), Cao Yu(郁超), Jiakai Zhou(周佳凯), Xiaoning Liu(柳晓宁), Xianglin Su(苏祥林),Ying Zhao(赵颖), and Guofu Hou(侯国付). Sub-stochiometric MoO_x by radio-frequency magnetron sputtering as hole-selective passivating contacts for silicon heterojunction solar cells[J]. 中国物理B, 2022, 31(9): 98401-098401.
[15]	Qian Liang(梁前), Xiang-Yan Luo(罗祥燕), Yi-Xin Wang(王熠欣), Yong-Chao Liang(梁永超), and Quan Xie(谢泉). Modulation of Schottky barrier in XSi₂N₄/graphene (X=Mo and W) heterojunctions by biaxial strain[J]. 中国物理B, 2022, 31(8): 87101-087101.