Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

doi:10.1088/1674-1056/28/8/086801

中国物理B ›› 2019, Vol. 28 ›› Issue (8): 86801-086801.doi: 10.1088/1674-1056/28/8/086801

• CONDENSED MATTER: STRUCTURAL, MECHANICAL, AND THERMAL PROPERTIES • 上一篇下一篇

Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

Wen-Ting Zhang(张文婷), Fen-Xia Wang(王粉霞), Yu-Miao Li(李玉苗), Xiao-Xing Guo(郭小星), Jian-Hong Yang(杨建红)

1 Institute of Microelectronics, Lanzhou University, Lanzhou 730000, China;
2 School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China

收稿日期:2019-04-10 修回日期:2019-05-27 出版日期:2019-08-05 发布日期:2019-08-05
通讯作者: Jian-Hong Yang E-mail:yangjh@lzu.edu.cn

Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

Wen-Ting Zhang(张文婷)^1,2, Fen-Xia Wang(王粉霞)¹, Yu-Miao Li(李玉苗)¹, Xiao-Xing Guo(郭小星)¹, Jian-Hong Yang(杨建红)¹

1 Institute of Microelectronics, Lanzhou University, Lanzhou 730000, China;
2 School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070, China

Received:2019-04-10 Revised:2019-05-27 Online:2019-08-05 Published:2019-08-05
Contact: Jian-Hong Yang E-mail:yangjh@lzu.edu.cn

摘要/Abstract

摘要： In this study, we present an organic field-effect transistor floating-gate memory using polysilicon (poly-Si) as a charge trapping layer. The memory device is fabricated on a N⁺-Si/SiO₂ substrate. Poly-Si, polymethylmethacrylate, and pentacene are used as a floating-gate layer, tunneling layer, and active layer, respectively. The device shows bidirectional storage characteristics under the action of programming/erasing (P/E) operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate. The carrier mobility and switching current ratio (I_on/I_off ratio) of the device with a tunneling layer thickness of 85 nm are 0.01 cm²·V^-1·s^-1 and 10², respectively. A large memory window of 9.28 V can be obtained under a P/E voltage of ±60 V.

关键词: organic floating-gate memory, polysilicon floating-gate, memory window

Abstract: In this study, we present an organic field-effect transistor floating-gate memory using polysilicon (poly-Si) as a charge trapping layer. The memory device is fabricated on a N⁺-Si/SiO₂ substrate. Poly-Si, polymethylmethacrylate, and pentacene are used as a floating-gate layer, tunneling layer, and active layer, respectively. The device shows bidirectional storage characteristics under the action of programming/erasing (P/E) operation due to the supplied electrons and holes in the channel and the bidirectional charge trapping characteristic of the poly-Si floating-gate. The carrier mobility and switching current ratio (I_on/I_off ratio) of the device with a tunneling layer thickness of 85 nm are 0.01 cm²·V^-1·s^-1 and 10², respectively. A large memory window of 9.28 V can be obtained under a P/E voltage of ±60 V.

Key words: organic floating-gate memory, polysilicon floating-gate, memory window

中图分类号: (Polymers, organics)

68.35.bm

72.20.Jv (Charge carriers: generation, recombination, lifetime, and trapping) 73.40.Gk (Tunneling) 73.90.+f (Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)

张文婷, 王粉霞, 李玉苗, 郭小星, 杨建红. Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer[J]. 中国物理B, 2019, 28(8): 86801-086801.

Wen-Ting Zhang(张文婷), Fen-Xia Wang(王粉霞), Yu-Miao Li(李玉苗), Xiao-Xing Guo(郭小星), Jian-Hong Yang(杨建红). Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer[J]. Chin. Phys. B, 2019, 28(8): 86801-086801.

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Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

Organic field-effect transistor floating-gate memory using polysilicon as charge trapping layer

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