|
The influence of SiNx substrate on crystallinity of μc-Si film used in thin film transistors
李娟, 吴春亚, 刘建平, 赵淑芸, 孟志国, 熊绍珍, 张丽珠
2006 (6):
1330-1334.
doi: 10.1088/1009-1963/15/6/033
摘要
(
1797 )
PDF(372KB)
(
701
)
This paper found that the crystalline volume ratio ($X_{\rm c}$) of $\mu$c-Si
deposited on SiN$_x$ substrate is higher than that on 7059 glass. At the same
silane concentration (SC) (for example, at SC=2{\%}), the $X_{\rm c}$ of $\mu$c-Si
deposited on SiN$_x$ is more than 64{\%}, but just 44{\%} if deposited on
Conning 7059. It considered that the `hills' on SiN$_x$ substrate
would promote the
crystalline growth of $\mu$c-Si thin film, which has been confirmed by
atomic force microscope (AFM)
observation. Comparing several thin film transistor (TFT) samples whose
active-layer were deposited
under various SC, this paper found that the appropriate SC for the
$\mu$c-Si thin
film used in TFT as active layer should be more than 2{\%}, and $X_{\rm c}$ should be
around 50\%. Additionally, the stability comparison of $\mu$c-Si TFT and
a-Si TFT is shown in this paper.
相关文章 |
计量指标
|