中国物理B ›› 2006, Vol. 15 ›› Issue (4): 792-797.doi: 10.1088/1009-1963/15/4/020
王英民1, 王晓荷1, 赵桂茹1, 恩云飞2, 罗宏伟2, 师谦2, 钱聪3, 张正选3, 林成鲁3, 王曦3, 张恩霞4
Zhang En-Xia (张恩霞)ac, Qian Cong (钱聪)a, Zhang Zheng-Xuan (张正选)a, Lin Cheng-Lu (林成鲁)a, Wang Xi (王曦)a, Wang Ying-Min (王英民)b, Wang Xiao-He(王晓荷)b, Zhao Gui-Ru (赵桂茹)b, En Yun-Fei (恩云飞)c, Luo Hong-Wei (罗宏伟)c, Shi Qian (师谦)c
摘要: The hardening of the buried oxide (BOX) layer of separation by implanted oxygen (SIMOX) silicon-on-insulator (SOI) wafers against total-dose irradiation was investigated by implanting ions into the BOX layers. The tolerance to total-dose irradiation of the BOX layers was characterized by the comparison of the transfer characteristics of SOI NMOS transistors before and after irradiation to a total dose of 2.7 Mrad(SiO2. The experimental results show that the implantation of silicon ions into the BOX layer can improve the tolerance of the BOX layers to total-dose irradiation. The investigation of the mechanism of the improvement suggests that the deep electron traps introduced by silicon implantation play an important role in the remarkable improvement in radiation hardness of SIMOX SOI wafers.
中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))